Lucent Technologies Inc.

Mary L Gray

Leonard Jan-Peter Ketelsen

Mark S Hybertsen

Joseph Brian Seiler

Harald F Hess

Chris W Ebert

Karen A Grim-Bogdan

Nikolaos Tzafaras

A micro-photoreflectance technique has been developed for performing non-destructive analysis of III-V optoelectronic devices. By using a significantly reduced spot size (for example, 10 micrometers), various compositional features of the device may be analyzed and the Franz-Keldysh oscillations appearing in the micro-photoreflectance wavelength spectra (such as those beyond the barrier/SCL wavelength in an EML structure) may be analyzed to provide information regarding the physical characteristics of the device, such as the electric field and p-i junction placement within an exemplary EML device structure.

Photoreflectance spectral analysis of semiconductor laser structures

A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.

Method of improving laser yield for target wavelengths in epitaxial

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Wyomissing, PA, United States of America

Mary L Gray