Lam Research Corporation

Mary Anne Manumpil

Jun Xue

Samantha S H Tan

Jengyi Yu

Da Li

Shih-Ked Lee

Eric A Hudson

Samantha SiamHwa Tan

Matthew Scott Weimer

Ragesh Puthenkovilakam

Chin-Jui Hsu

Gordon Alex Macdonald

Shaoqing Zhang

Xizhu Zhao

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Underlayer for photoresist adhesion and dose reduction

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

High density, modulus, and hardness amorphous carbon films at low pressure

A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

High etch selectivity, low stress ashable carbon hard mask

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Northridge, CA, United States of America

Mary Anne Manumpil