International Business Machines Corporation

Globalfoundries Inc.

Freescale Semiconductor,inc.

Globalfoundies Inc.

Marwan H Khater

Gregory Gower Freeman

Steven M Shank

Renata A Camillo-Castillo

Solomon Assefa

Vibhor Jain

Qizhi Liu

Vikas Kumar Kaushal

Tymon Barwicz

Andreas Daniel Stricker

David Louis Harame

Takashi Ando

Hiroyuki Miyazoe

Seyoung Kim

William M Green

Francois Pagette

Yurii A Vlasov

Kathryn Turner Schonenberg

Jessie Carrigan Rosenberg

John J Ellis-Monaghan

Edward William Kiewra

Christian Lavoie

Alvin Jose Joseph

Zhen Zhang

William M J Green

William R Tonti

Kevin K Chan

Rama Divakaruni

Tak H Ning

Bin Yang

Jin Cai

Rajendran Krishnasamy

Hiroyuki Akatsu

Jae-Sung Rieh

John C S Hall

Anthony K Stamper

Dureseti Chidambarrao

John Joseph Pekarik

Randy William Mann

Robert J Purtell

David R Greenberg

Peter B Gray

Peter John Geiss

Beth Ann Rainey

Dechao Guo

James William Adkisson

Jeng-Bang Yau

Martin Michael Frank

Thomas N Adam

Robert K Leidy

Eduard Albert Cartier

Richard Paul Volant

Robert H Dennard

Omer H Dokumaci

Sufi Zafar

Jason Scott Orcutt

James Stuart Dunn

Douglas Max Gill

Leathen Shi

Stephen Arthur St Onge

Jens Hofrichter

Lidija Sekaric

BethAnn Rainey

James Randall Elliott

David C Ahlgren

Christopher M Schnabel

Swetha Kamlapurkar

Carol Reinholm

Vijay Narayanan

Ramachandran Muralidhar

Anil Kumar Chinthakindi

Bradley Alan Orner

Basanth Jagannathan

Mattias E Dahlstrom

Peng Cheng

Santosh Sharma

Xudong Wang

Yurri A Vlasov

Panda Siddhartha

Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

Silicon photonics integration method and structure

Cross bar array devices and methods of forming the same include first electrodes arranged adjacent to each other and extending in a first direction. Second electrodes are arranged transversely to the first electrodes. An electrolyte layer is disposed between the first electrodes and the second electrodes, the electrolyte layer comprising a nitridated dielectric material.

High-resistance memory devices

A resistive random access memory (RRAM), including a first electrode, a base oxide being connected to the first electrode, and a multivalent oxide being connected to the base oxide layer. The multivalent oxide switches oxidative states.

Multivalent oxide cap for analog switching resistive memory

A memory includes a base oxide provided between a first electrode and a second electrode, and a multivalent oxide provided between the first electrode and the second electrode. The multivalent oxide switches between at least two oxidative states.

Embodiments of the present invention provide systems and methods for the fabrication of a crossbar array fabrication of resistive random access memory (RRAM) cells. The array structure contains large grain copper and its alloy or silver and its alloy. A metal cap and spacer are used to protect copper or silver from chemical modifications during memory cell patterning.

Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes

Embodiments are directed to a method of forming an optical coupler system. The method includes forming at least one waveguide over a substrate, and forming a sacrificial optical coupler in a first region over the substrate. The method further includes configuring the sacrificial optical coupler to couple optical signals to or from the at least one waveguide, and forming a v-groove in the first region over the substrate, wherein forming the v-groove includes removing the sacrificial optical coupler from the first region.

Sacrificial grating coupler for testing v-grooved integrated circuits

Embodiments are directed to a method of forming an optical coupler system. The method includes forming at least one waveguide over a substrate, and forming gratings in a first region over the substrate. The method further includes configuring the gratings to couple optical signals to or from the at least one waveguide, and forming a v-groove in the first region over the substrate, wherein forming the v-groove includes removing the gratings from the first region.

Sacrificial coupler for testing V-grooved integrated circuits

A cross bar array device includes first electrodes arranged adjacent to each other and extending in a first direction, the first electrodes including a main electrode layer and a scalable electrode layer. Second electrodes are arranged transversely to the first electrodes, the second electrodes including a main electrode layer and a scalable electrode layer. An electrolyte layer is disposed between the scalable electrode layers of the first electrodes and the second electrodes. A scalable electrode is formed from a scalable electrode layer and includes an undercut having a side laterally recessed from a width of a corresponding main electrode.

Scaled cross bar array with undercut electrode

Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

Photodetector and methods of manufacture

A resistive random access memory (RRAM) includes a first electrode, a second electrode, a base oxide provided between the first electrode and the second electrode, and a multivalent oxide provided between the first electrode and the second electrode. The multivalent oxide switches between at least two oxidative states.

Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

Photodetector methods and photodetector structures

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Astoria, NY, United States of America

Marwan H Khater