Axcelis Technologies, Inc.

Marvin Raymond LaFontaine

Ashwin Madhukar Purohit

William Davis Lee

Klaus Becker

Ari Eiriksson

Richard Rzeszut

Michel Pharand

Donovan Beckel

Samir A Nayfeh

Alexander H Slocum

Robert J Mitchell

Steven Dana Weed

Klaus Petry

Joseph Daniel Gillespie

Leonard Michael Rubin

Joseph Foley

Michael Pharand

Wayne Arseneault

Teng Chao Tao

Shantanu Pathak

David B Smith

Teng Chao D Tao

Michael R Mitrano

Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.

Vapor compression refrigeration chuck for ion implanters

An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force.

Gas bearing electrostatic chuck

An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.

Electrostatic chuck ground punch

An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.

Annulus clamping and backside gas cooled electrostatic chuck

One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

De-clamping wafers from an electrostatic chuck

The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.

Non-condensing thermos chuck

The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote&#xae; and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote&#xae;.

Electrostatic chuck with compliant coat

An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.

Wafer grounding method for electrostatic clamps

A combination load lock apparatus is provided, wherein a chamber is coupled to two or more valves in selective fluid communication with two or more respective volumes. A support member for supporting a workpiece is disposed within an interior portion of the chamber, wherein a translation apparatus is operably coupled thereto. The translation apparatus is operable to rotate and/or translate the workpiece on the support member about and/or along a first axis, wherein a detection apparatus associated with the chamber is operable to detect one or more characteristics of the workpiece during the rotation and/or translation thereof. The workpiece may be further rotated in a predetermined manner based on the one or more detected characteristics. A recess is further defined in the interior portion of the chamber, wherein the translation apparatus is operable to translate the workpiece into and out of the recess to reduce particulate contamination thereon.

Combination load lock for handling workpieces

A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Low-cost electrostatic clamp with fast de-clamp time

An ion implantation apparatus, system, and method are provided for connecting and disconnecting a workpiece holder from a scan arm. A twist head is provided, wherein an electrostatic chuck is operable to be mounted, wherein one or more rotating and non-rotating members associated with one or more of the twist head and electrostatic chuck have one or more dynamic electrical and fluid rotary connections associated therewith. The electrostatic chuck is further operable to be removed from the twist head without disconnecting the one or more dynamic fluid seals.

Growing community of inventors

Kingston, NH, United States of America

Marvin Raymond LaFontaine