Gte Laboratories Incorporated

Corning Applied Technologies Corporation

Nz Applied Technologies Corp.

Laboratories Incorporated

Marvin J Tabasky

Craig A Armiento

Thomas W Fitzgerald

Paul O Haugsjaa

Paul Melman

Paul E Poppert

Victor Cataldo

Harry F Lockwood

Jagannath Chirravuri

Margaret B Stern

Eugene O Degenkolb

Brian M Ditchek

Emel S Bulat

Chirravuri Jagannath

Vincent J Barry

Mark A Rothman

Jeremiah P McCarthy

Bruce Tweed

Paul O Haugasjaa

A system for aligning the optical components of a chemical analysis system in which capillaries or optical fibers are supported by a substrate. The system provides for alignment of elements of an electrophoresis system in an efficient high sampling rate capability. The system provides multiple sources, such as lasers or LEDs that are optically coupled to each capillary or channel. Multi-analyte capability, a variety of analysis modes and DNA sequencing operations are applications of systems using a plurality of lasers per channel.

System and method for molecular sample measurement

A system for aligning the optical components of a chemical analysis system in which capillaries or optical fibers are supported by a micromachined substrate. The system provides for alignment of elements of an electrophoresis system in an efficient high sampling rate capability.

A system for aligning the optical components of a chemical analysis system in which capillaries or optical fibers are supported by a micromechanied substrate. The system provides for alignment of elements of an electrophoresis system in an efficient high sampling rate capability.

System and method for molecular sample measurements

A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal structures and one side pedestal structure, and two vertical post structures within a mounting region defined by the pedestal struutures. The laser chip is mounted on the vertical post structures, and placed in concurrent abutting contact with the pedestal structures. The waferboard is fabricated by etching the substrate to form the front and side pedestal structures, and etching the substrate to define the grooves. In order to form the post structures, a polyimide material is deposited on the substrate using an appropriate mask.

Waferboard structure

Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes. The holes are filled with insulating polycrystalline silicon. The region of the selected area is heavily doped, and an ohmic contact member is made thereto. The underlying rods are spaced from the ohmic contact member and the heavily-doped region by intervening polycrystalline silicon.

Contacts to rod shaped Schottky gate fets

A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal structures and one side pedestal structure, and two vertical post structures within a mounting region defined by the pedestal structures. The laser chip is mounted on the vertical post structures, and placed in concurrent abutting contact with the pedestal structures. The waferboard is fabricated by etching the substrate to form the front and side pedestal structures, and etching the substrate to define the grooves. In order to form the post structures, a polyimide material is deposited on the substrate using an appropriate mask.

Method of fabricating waferboard structure

Waferboard structure and method of fabricating

A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioned the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

Method and device for passive alignment of diode lasers and optical

A junction field effect transistor, specifically a static induction transistor. Prior to metallization a thin layer of germanium is placed over the exposed silicon of the source and gate regions. The germanium is intermixed with the underlying silicon to form a germanium-silicon composite. A rapid thermal anneal is performed to recrystallize the germanium-silicon composite. Alternatively, a single crystal epitaxial layer may be deposited on the silicon. Conventional metallization procedures are employed to produce ohmic source and gate contact members to the germanium-silicon composite or the epitaxial germanium of the source and gate regions. By virtue of the reduced bandgap provided by the presence of the germanium, the contact resistance of the device is reduced.

Junction field effect transistor with SiGe contact regions

Method of making ohmic electrical contact to a matrix of semiconductor

A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels to that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

Method of forming a fluorinated silicon nitride film on a semiconductor substrate by first forming a coating of ammonium hexafluorosilicate on the electrode of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluoride and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency to produce a fluorinated silicon nitride film on the substrate.

Method of depositing fluorinated silicon nitride

Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

Growing community of inventors

Peabody, MA, United States of America

Marvin J Tabasky