Fuji Electric Co., Ltd.

Fuji Electric Corporate Research & Development Co., Ltd.

Maruyama Kazumi

Uchida Yoshiyuki

In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In.sub.2 O.sub.3 having a relatively low sheet resistance and a thickness of about 1000 .ANG., a second transparent electrode layer of SnO.sub.2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200.degree.-250.degree. C., and a metal electrode.

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Yokosuka, Japan

Maruyama Kazumi