Celestial Ai Inc.

Nokia of America Corporation

Martinus Bos

Philip Winterbottom

Ankur Aggarwal

Subal Sahni

David E Lazovsky

Jason Rupert Redgrave

Yangjin Ma

Nikolaos Pleros

Apostolos Tsakyridis

Angelina Totovic

George Giamougiannis

Gino Pedro Enrique Rea Zanabria

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Optically bridged multicomponent package with extended temperature range

A package includes a photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

Embedding a photonic integrated circuit in a semiconductor package for high bandwidth memory and compute

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

Optical multi-die interconnect bridge with electrical and optical interfaces

A photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

Various embodiments provide for electro-photonic networks, including a plurality of processing elements connected by bidirectional photonic channels, suited for implementing neural-network models. Weights of the model may be preloaded into memory of the processing elements based on assignments of neural nodes to processing elements implementing them, and routers of the processing elements can be configured to stream activations between the processing elements based on a predetermined flow of activations in the model.

Electro-photonic network for machine learning

Various embodiments provide for clock signal distribution within a processor, such as a machine learning (ML) processor, using a photonic fabric.

Clock signal distribution using photonic fabric

Electro-photonic networks, including a plurality of processing elements connected by bidirectional photonic channels, suited for implementing neural-network models. Weights of the model may be preloaded into memory of the processing elements based on assignments of neural nodes to processing elements implementing them, and routers of the processing elements can be configured to stream activations between the processing elements based on a predetermined flow of activations in the model.

One embodiment is a method that includes generating a request for a data item in a memory, obtaining the data item from the memory with a photonic interface, sending the data item to a fabric using a transmit unit of the photonic interface, and routing the data item through a portion of the fabric coupled to the memory, the portion of the fabric including one or more additional transmit and receive units between the photonic interface and a destination receive unit.

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San Jose, CA, United States of America

Martinus Bos