Rohm & Haas Electronic Materials LLC

Shipley Company LLC

Te Connectivity Solutions Gmbh

Te Connectivity Services Gmbh

Dow Global Technolgoies LLC

Martin William Bayes

Ting Gao

Denis Morrissey

David Merricks

Donald E Storjohann

Chad William Morgan

Lei Wang

Peter Trefonas, Iii

Mohamed Esseghir

David Patrick Orris

Michael Chi-Yung Tang

Hung-Tat Chan

Deyan Wang

William J Harris

James G Shelnut

David Bruce Sarraf

Edit Szocs

Felix J Schwager

Dennis Kwok-Wai Yee

Gokce Gulsoy

Chun-Man Chan

Peter W Hinkley

James Zeigler

Tsui-Kiu Li

Maria Anna Rzeznik

Jeffrey M Calvert

Chester J Kmiec

Lin Fu

Robert F Eaton

Mark Lefebvre

Michael P Toben

Nathaniel E Brese

Ka-Ming Yip

Philip Singer

Lok-Lok Liu

Eugene N Step

John P Cahalen

Kathleen M O'Connell

Leon Barstad

Edward C Couble

Philip D Knudsen

Rodney Ivan Martens

Joseph R Montano

Chit Yiu Chan

Bret P Neese

Robert A Schetty, Iii

Yuhsin Tsai

Christopher P Esposito

Jevon Ryan Corban

Qin Tang

Kit Ho Tong

Xuesong Wang

Kimberly B Wynja

Peter A Benson

Takahiro Kobayashi

Masaki Kondoh

Kenneth Seufer

Suvrat Bhargava

Bradley M Schultz

Matthew Little

A layered plating stack which includes an underlying plating layer formed on a substrate; an intermediate plating layer; an outer plating layer; and at least one strike layer of noble metal. The noble metal of the strike layer is a different metal than the metal of the intermediate plating layer. The layered plating stack with the strike layer maintains contact resistance of below 25 mohms when tested under a load of at least approximately 30 grams after 1 or more days of exposure to a gaseous environment which includes Cl, NOand SO. The layered plating stack with the strike layer also maintains a contact resistance of below 25 mohms when tested under a load of at least approximately 30 grams with a wipe of at least approximately 0.1 mm after exposure to a gaseous environment which includes one or more of HS, Cl, NOand SO.

Layered plating stack for improved contact resistance in corrosive environments

The present invention relates to metallic structure with desired combinations of mechanical and electrical characteristics formed of a higher electrical conductivity element with a mechanically stronger element.

Metallic structure with desired combinations of mechanical and electrical characteristics

A printable non-curable thixotropic hot melt composition is described. The composition comprises non-curable holt melt waxes transformed into a thixotropic composition by the use of thickeners. The thickeners can be added separately to the hot melt wax or formed in-situ, either before or after application to the substrate. A process of forming such printable non-curable thixotropic hot melt composition is described.

Printable non-curable thixotropic hot melt composition

A printable non-curable thixotropic hot melt composition is described. The composition comprises non-curable holt melt waxes transformed into a thixotropic composition by the use of thickeners. The thickeners can be added separately to the hot melt wax or formed in-situ. A process of forming such printable non-curable thixotropic hot melt composition is described.

The present invention relates to use of an enhanced performance ultraconductive copper composite cylindrical conduit. The ultraconductive copper composite cylindrical conduit has enhanced RF conductivity.

Use of enhanced performance ultraconductive copper materials in cylindrical configurations and methods of forming ultraconductive copper materials

A mezzanine power pin includes a dual layer pin body extending between a pin top having an upper power interface and a pin bottom having a lower power interface. The dual layer pin body has a base metal core and an outer metal oxide layer combined with the base metal core defining an outermost layer of the dual layer pin body. The mezzanine power pin includes an upper fastener coupled to the pin top to mechanically and electrically connect an upper component to the upper power interface. The mezzanine power pin includes a lower fastener coupled to the pin bottom to mechanically and electrically connect a lower component to the lower power interface. The base metal core is configured to electrically connect the upper component and the lower component through the base metal core.

Mezzanine power pin for an electrical connector system

A method for forming a polymerized film on a surface of a non-conductive material and subsequently forming an electroless metal plating film on the surface is described. The method includes the step of contacting the surface of the material with a solution including (A) an amine compound having at least two functional groups, where at least one of the functional groups is an amino group, and (B) an aromatic compound having at least one hydroxyl group on the aromatic ring.

Method for electroless metallization

A process of pretreatment for selective application of electroless metallization to a surface of a non-conductive material and a solution useful for the pretreatment are provided. The process achieves good coverage in areas to be plated on the surface of non-conductive materials without skip plating or over plating.

Process for electroless plating and a solution used for the same

Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.

Electrochemically deposited indium composites

The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and The invention also provides a composition comprising at least the following:

Methods and compositions for removal of metal hardmasks

An organic solderability preservative solution includes pyrazine derivatives which inhibit corrosion of metal. The solution is applied to metal surfaces of components for electronic apparatus to improve solderability of electrical connections between the components in the electronic apparatus.

Organic solderability preservative and method

Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.

Seed layer

Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.

Seed layer repair bath

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Hopkinton, MA, United States of America

Martin William Bayes