Infineon Technologies Ag

Osram Opto Semiconductors Gmbh

Motorola Corporation

Infineon Technologies Sc300 Gmbh & Co., Kg

Martin Welzel

Karl Engl

Sebastian Taeger

Veronika Polei

Michael Huber

Stefan Ottow

Jens Zimmermann

Dan Wissel

Bernd Stottko

Markus Tautz

Matthew John Davies

In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.

Method for structuring a semiconductor surface and semiconductor body comprising a semiconductor surface having at least one structure

A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface.

Method of encapsulating an optoelectronic device and light-emitting diode chip

An apparatus for measuring the water content of a water-containing liquid mixture contained in a tight chemistry tank includes a heating device for controlling the temperature of the liquid mixture to a temperature near the boiling point of the liquid mixture, a cooling medium system disposed at the top of the tight chemistry tank having a cooling medium inlet and a cooling medium outlet, a temperature measurement system for determining the temperature difference between the cooling medium inlet and outlet, and a computing device for calculating the water content of the liquid mixture from the temperature difference. Also provided is a tank for supplying water to the liquid mixture, and a control system for adjusting the amount of water supplied from the tank based upon the water content measured by the measuring apparatus. Also provided is a method for measure the water content.

Method and apparatus for measuring and controlling the water content of a water-containing liquid mixture

A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.

Field-effect transistor having a contact to one of its doping regions, and method for fabricating the transistor

In a method for removing an organic material from semiconductor devices, at least one semiconductor device is inserted into a so-called piranha bath. Measurement data are processed to get a data curve for measuring a concentration of at least one reaction product. The measurement data is queried for at least one of a turning point, a local maximum point or a local minimum point of the curve each being significantly different from signal noise after removing the semiconductor device from the fluid. With the information it is decided whether further processing of the semiconductor device is needed. The method is suitable for detecting an incomplete removal of organic material, i.e. photoresist deposited on the processed semiconductor device.

Method for detecting removal of organic material from a semiconductor device in a manufacturing process

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Dresden, Germany

Martin Welzel