Globalfoundries Inc.

Martin Weisheit

Joachim Patzer

Dominic Thurmer

Ardechir Pakfar

Bastian Haussdoerfer

Remi Riviere

Robert Melzer

Chih-Chun Wang

A method for the manufacture of a semiconductor device is provided, including the steps of providing a semiconductor substrate including a first area separated from a second area by a first isolation region, wherein the second area includes an intermediate transistor comprising a gate electrode, forming an oxide layer over the first and second areas, forming an optical planarization layer (OPL) over the oxide layer, forming a mask layer over the OPL in the first area without covering the OPL in the second area, and etching the OPL with the mask layer being present to expose the oxide layer over the gate electrode of the transistor.

Method of forming a semiconductor device employing an optical planarization layer

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Dresden, Germany

Martin Weisheit