Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Schott Ag

Martin Weiser

Udo Dinger

Frank Eisert

Siegfried Stacklies

Holger Maltor

Guenther Seitz

Toralf Gruner

Hubert Holderer

Bernhard Gellrich

Boris Bittner

Ulrich Weber

Alexander Kohl

Johannes Lippert

Christoph Zaczek

Ina Mitra

Walter Pauls

Heiko Siekmann

Markus Haidl

Matus Banyay

Claudia Ekstein

Hartmut Muenker

Jens Ullmann

Stefan Burkart

Florian Ahles

Konrad Knapp

Ulrich Andiel

Stefan Burkhart

Olaf Bork

Hans Morian

The disclosure relates to a device for changing a shape of a surface of an optical element via electron irradiation. The device includes an electron irradiation unit for radiating electrons onto the surface with a locally resolved energy dose distribution for the purpose of producing local material densifications in the optical element. Furthermore, the device includes a control unit for determining a locally resolved energy dose distribution from a predefined desired change of a surface shape of the optical element by optimization via a minimization of a merit function, in such a way that a difference between the desired change and an actual change of the surface shape of the optical element, the actual change being brought about on account of the predefinition determined, is minimized.

Device for changing a surface shape of an optical element via electron irradiation

A wavefront correction element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or a mask inspection apparatus, has a carrier film () which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and that impinges on the carrier film during operation of the optical system. The carrier film () is configured such that the real part of the complex refractive index of the carrier film varies over a used region of the surface of the carrier film ().

Wavefront correction element for use in an optical system

Substrates suitable for mirrors which are used at wavelengths in the EUV wavelength range have a main body () and a polishing layer (). The polishing layer () has a thickness of less than 10 &#x3bc;m and a root-mean-square roughness of less than 0.5 nm and the main body () is produced from an aluminum alloy. Moreover, a highly reflective layer () is provided on the polishing layer () of the substrate () of the EUV mirror ().

Substrate for mirrors for EUV lithography

A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, whereby the surface is lowered and/or removed at least partially, and wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed in accordance with the method.

Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements

A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, so that the surface is lowered and/or removed at least partially, wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed by the method.

A method for removing at least one reflective layer () from an optical element () for EUV lithography, wherein the optical element () has a substrate () and an interlayer () between the substrate () and the at least one reflective layer (). The method includes etching away the at least one reflective layer () as far as the interlayer () with an etching gas (), wherein the material of the interlayer () does not react with the etching gas (), and wherein, after the etching away, the interlayer () has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element () for reflecting radiation in the EUV wavelength range includes a substrate (), at least one reflective layer (), and an interlayer () arranged between the substrate () and the at least one reflective layer (). The interlayer () is composed at least partly of a material which does not react with a halogen or a halogen compound as etching gas () and which is selected, in particular, from one or more of the following: alkali metal halides, alkaline earth metal halides and aluminum oxide (AlO). The interlayer () has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms.

Removing reflective layers from EUV mirrors

A mirror for use in a projection exposure apparatus is described. The mirror has a main surface extending beyond an outline of an optical surface of the main surface. The optical surface has a roughness of less than 1 nm rms, and the outline of the optical surface includes a portion where the main surface extends beyond the optical surface by less than 0.2 mm. Manufacturing the mirror may involve polishing the optical surface in regions of the main surface extending beyond the optical surface and removing material of the substrate carrying a portion of the surface extending beyond the optical surface.

Mirror for use in a projection exposure apparatus

A method of manufacturing an optical element having an optical surface extending close to a periphery of a substrate comprises: providing a substrate having a main surface extending beyond a periphery of the optical surface and also performing a polishing of the optical surface in regions of the main surface extending beyond the optical surface. Thereafter, material of the substrate carrying a portion of the surface extending beyond the optical surface is removed.

Method of manufacturing an optical element

A device serves for reflecting electromagnetic waves, in particular in a length range less than 200 nm. It has a mirror carrier made of a material with at least approximately vanishing thermal expansion and at least one reflective layer applied on said mirror carrier. An intermediate layer made of a material which is formed such that its surface roughness is not significantly increased after beam processing methods is fitted between the mirror carrier and the reflective layer.

Reflecting device for electromagnetic waves

There is provided a substrate material for an optical component for X-rays of wavelength &#x3bb;. The substrate includes (a) a glass phase made of amorphous material having a positive coefficient of thermal expansion, and (b) a crystal phase including microcrystallites having a negative coefficient of thermal expansion and a mean size of less than about 4 &#x3bb;. The substrate material has a stoichiometric ratio of the crystal phase to the glass phase such that a coefficient of thermal expansion of the substrate material is less than about 5&#xd7;10Kin a temperature range of about 20 &#xb0;C. to 100&#xb0;C. The substrate material, following a surface treatment, has a high spatial frequency roughness (HSFR) of less than about &#x3bb;/30 rms.

Substrate material for X-ray optical components

A catadioptric objective comprises a plurality of lenses and at least two deflecting mirrors that have reflecting surfaces that are at a specific angle, in particular of 90&#xb0;, to one another. The two deflecting mirrors are arranged with their reflecting surfaces on a common base member whose position in the objective can be set.

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Sinsheim, Germany

Martin Weiser