Degussa Aktiengesellschaft

Leybold Materials Gmbh

W.c. Heraeus Gmbh & Co Kg

Leybold Aktiengesellschaft

Martin Weigert

Uwe Konietzka

Bruce Gehman

Martin Schlott

Martin Kutzner

Christoph Simons

Markus Schultheis

Uwe Kopacz

Christoph Daube

Andreas Rack

Wolfgang Dauth

Lorenz Berchtold

Horst Becker

Shawn Vahlstrom

Stephan U Schittny

Kwei Teng

An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 &#x3a9;-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Sputter target based on titanium dioxide

The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si N or SiO in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation

Target for a magnetron-cathode sputtering apparatus is made from a cobalt base alloy containing additional elements in such concentrations that intermetallic phases are formed with at least one of these elements and intermetallic phases are observed on the basis of the phase diagram in the state of equilibrium at the operating temperature of the target. The grain boundaries, sub-grain boundaries, twin-grain boundaries or slip bands of the cobalt mixed crystal forming the matrix are decorated with the elements forming the intermetallic phases. X-ray diffraction diagrams made from the target display reflections of an intermetallic phase which is largely absent in the cast state and which forms only during a heat treatment in the temperature range below the solidus temperature of the alloy by a solid state reaction.

Cobalt base alloy target for a magnetron cathode sputtering system

The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In.sub.2 O.sub.3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner.

Process for the production of partially reduced indium oxide-tin oxide

A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

Sputter target for cathodic atomization to produce transparent,

Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.

Target for cathode sputtering and method of its production

The invention concerns a process for coating a substrate 1 of little or no corrosion resistance, especially a metal substrate having an alloy consisting at least of Ni, Cr and Fe, in an evacuable coating chamber 15, 15a. It comprises making an electrode that can be connected to a current supply 10, this electrode being electrically connected to a target 3 which is sputtered and the sputtered particles of which are deposited on the substrate 1. Reactive process gases are, for this purpose, supplied to the coating chamber 15, 15a, so that an amorphously depositing layer 2 is applied onto the substrate.

Method for coating a substrate of low resistance to corrosion

Targets for magnetron - sputtering systems with a high utilization of material are obtained from ferromagnetic alloys if the amount of hexagonal structural phase is greater than the cubic phase portion and if the hexagonal prism axis (0001) is aligned preferably vertically to the target surface.

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Hanau, Germany

Martin Weigert