Siltronic Ag

Msa Europe Gmbh

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Wacker Chemie Ag

Msa Auer Gmbh

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Wacker Siltronic Gesellschaft F&uuml;r Halbleiter Materialien Ag

Nexxtdrive Limited

Martin Weber

Wilfried Von Ammon

Herbert Schmidt

Robert Vorbuchner

Erich Gmeilbauer

Katsuhiko Nakai

Ralf Warratz

Rolf Eckhardt

Reiner Pech

Heinz Kraus

Erich Dornberger

Timo Mueller

Andreas Sattler

Walter Haeckl

Gudrun Kissinger

Janis Virbulis

Atsushi Ikari

Peter Vilzmann

Kathrin Keller

Michael Kerscher

Kathrin Tölle

Frank Becker

Walter Heuwieser

Detlef Kielow

Alfred Miller

Frank Moeller

Piotr Filar

Werner Schachinger

Yuri Gelfgat

Rupert Krautbauer

Leonid Gorbunov

Sei Fukushima

Walter Neumaier

Michael Schulz

Timo Müller

Thomas Wetzel

Kathrin TÖLLE

Kathrin GÖRKE

Von Ammon

Frank H Moeller

Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration &#x2264;50 m.

Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby

An electrochemical gas sensor includes an electrolyte including at least one ionic liquid which includes an additive portion including at least one organic additive, at least one organometallic additive or at least one inorganic additive.

Electrochemical gas sensors with ionic liquid electrolyte systems

The invention concerns a method for detection of the concentration of at least one gaseous target substance () in a gas or a gas mixture (), especially air, wherein: a) a first measured value () of the concentration of the at least one gaseous target substance () is saved as the first measured value () in a predetermined way and then b) the at least one target substance () is kept away from the sensor () with a gas shielding device () for a predetermined period of time, so that the concentration of the at least one target substance () measured by the sensor changes, c) before the end of the shielding of the sensor (), the magnitude of the measured concentration and/or the direction of the change in concentration of the gaseous target substance () as detected by the sensor () is saved as the second measured value (), d) the sensor () is then exposed again to the gas () with the at least one gaseous target substance (), while e) on the basis of the difference between the first measured value () and the second measured value (), an actual concentration of the at least one gaseous target substance () in the gas () is determined by means of a calculator (). The invention also concerns a gas monitoring device and a use of such a device.

Methods and devices for detection of the concentration of at least one gaseous target substance and use of a gas monitoring device

The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B.

Polycrystalline silicon rod and process for production thereof

The invention relates to an electrochemical sensor including a housing with a chamber containing an electrolyte, at least one measuring electrode for oxygen detection, at least one counter electrode and at least one reference electrode, wherein the sensor has a two-part diffusion barrier, wherein a first part of the barrier forms a labyrinth with a second part of the barrier disposed between the measuring and the counter electrode.

Electrochemical sensor with diffusion labyrinth

Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.

Method for producing semiconductor wafers composed of silicon with reduced pinholes

A method is provided for controlling operation of a pedal cycle () having a rear hub-mounted electro-mechanical transmission arrangement in which a chain-driven rear sprocket (), an input electrical machine () and the hub () are each coupled to a respective branch of a three-branch epicyclic gear set (). Allowing for natural variations in input torque by a cyclist over a cycle of the crank arms (), a substantially constant current is caused to exist in the input electrical machine () such that a change in torque applied by the cyclist results in a change in transmission ratio between the rear sprocket () and the hub (), thereby providing a form of automatic and continuously variable transmission for the pedal cycle ().

Bicycle transmission system

Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pregion, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pregion; the wafer has an OSF density of less than 10 cm, a BMD density in the bulk of at least 3.5&#xd7;10cm, and a radial distribution of the BMD density with a fluctuation range BMD/BMDof not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

Semiconductor wafer composed of monocrystalline silicon and method for producing it

The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:

Epitaxial wafer and production method thereof

Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Semiconductor wafers of silicon and method for their production

Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions &#x2267;20 &#x3bc;m below the wafer surface in the range of 5&#xd7;10/cm, and a density of BMDs with sizes of &#x2267;300 nm&#x2266;1&#xd7;10/cm, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.

Silicon wafer for semiconductor and manufacturing method thereof

Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

Method and device for producing semiconductor wafers of silicon

A blow filter device for breathing masks and hoods, comprising a blower which is driven by a motor and at least one filter which is arranged upstream from the blower, in addition to an electronic control system for adjusting a predefined airflow volume. The invention is characterized in that the motor is an electronically commutated direct current motor () which is controlled with the aid of a pulse width modulation ratio as a control variable, wherein a calibrating curve is created and stored in the memory () of the electronic control system and is based on a plurality of different filter resistances and a respectively corresponding pulse-width modulation ratio (PWM) and the respective motor speed (n) for a specific volume of air. The direct current motor can be controlled in the hood mode according to the speed (n) measured in relation to the respective filter resistance after activation with the aid of the associated pulse-width modulation ratio read from the calibrating curve and can be controlled in the mask mode independently of the respective filter resistance with a respective specific constant pulse-width modulation ratio (PWM) for the associated mask type, wherein the electronic control system () is associated with an identifying means () which is used to recognize the associated head part and to adjust the operational mode concerned.

Blow filter device

Growing community of inventors

Kastl, Germany

Martin Weber