Siltronic Ag

Intel Corporation

Martin Vorderwestner

Peter Storck

Peter G Tolchinsky

Irwin Yablok

Norbert Werner

Sarad Bahadur Thapa

A heteroepitaxial wafer comprises, in the following order: a silicon substrate having a diameter and a thickness;

Heteroepitaxial wafer and method for producing a heteroepitaxial wafer

An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1&#xd7;10atoms/cmor more and 1&#xd7;10atoms/cmor less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940&#xb0; C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

Epitaxial wafer and a method of manufacturing thereof

A multilayer semiconductor wafer has a substrate wafer having a first side and a second side; a fully or partially relaxed heteroepitaxial layer deposited on the first side of the substrate wafer; and a stress compensating layer deposited on the second side of the substrate wafer. The multilayer semiconductor wafer is produced by a method including depositing on a first side of a substrate a fully or partially relaxed heteroepitaxial layer at a deposition temperature; and at the same temperature or before significantly cooling the wafer from the deposition temperature, providing a stress compensating layer on a second side of the substrate.

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Unterreit, Germany

Martin Vorderwestner