Carl Zeiss Smt Gmbh

Martin Von Hodenberg

Norbert Wabra

Boris Bittner

Sonja Schneider

Ricarda Schoemer

Guenter Rudolph

Hartmut Enkisch

Olaf Conradi

Stephan Muellender

Johannes Zellner

Bryce Anton Moffat

Hendrik Wagner

Alexander Gratzke

Rumen Iliew

Ruediger Mack

Ricarda Schneider

Arne Schob

Stephan Müllender

A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

Projection exposure apparatus with at least one manipulator

A method of operating a microlithographic projection exposure apparatus includes, in a first step, providing a projection objective that includes a plurality of real manipulators. In a second step, a virtual manipulator is defined that is configured to produce preliminary control signals for at least two of the real manipulators. In a third step, performed during operation of the apparatus, a real image error of the projection objective is determined. In a fourth step, a desired corrective effect is determined. In a fifth step, first virtual control signals for the virtual manipulator are determined. In a sixth step, second virtual control signals for the real manipulators are determined.

Method of operating a microlithographic projection apparatus

Aberrations of a projection lens for microlithography can be subdivided into two classes: a first class of aberrations, which are distinguished by virtue of the fact that their future size increases by a non-negligible value after a constant time duration, independently of their current size, and a second class of aberrations, which, after reaching a threshold, only increase by a negligible value after each further time duration. An adjustment method is proposed, which adjusts these two classes of aberrations in parallel in time with one another.

System correction from long timescales

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Projection exposure method and projection exposure apparatus for microlithography

A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element () includes a multilayer system () for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase &#x3c6;, and a capping layer () made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.

Reflective optical element for EUV lithography and method of manufacturing a reflective optical element

A projection objective of a microlithographic projection exposure apparatus includes a wavefront correction device including a refractive optical element that has two opposite optical surfaces, through which projection light passes, and a circumferential rim surface extending between the two optical surfaces. A first and a second optical system are configured to direct first and second heating light to different portions of the rim surface such that at least a portion of the first and second heating light enters the refractive optical element. A temperature distribution caused by a partial absorption of the heating light results in a refractive index distribution inside the refractive optical element that corrects a wavefront error. At least the first optical system includes a focusing optical element that focuses the first heating light in a focal area such that the first heating light emerging from the focal area impinges on the rim surface.

Projection objective of a microlithographic projection exposure apparatus

A projection objective of a microlithographic projection apparatus has a wavefront correction device () comprising a mirror substrate () that has two opposite optical surfaces (), through which projection light passes, and a circumferential rim surface () extending between the two optical surfaces (). A first and a second optical system (OS, OS) are configured to direct first and second heating light (HL, HL) to different portions of the rim surface () such that at least a portion of the first and second heating light enters the mirror substrate (). A temperature distribution caused by a partial absorption of the heating light (HL, HL) results in a refractive index distribution inside the mirror substrate () that corrects a wavefront error. At least the first optical system (OS) comprises a focusing optical element () that focuses the first heating light in a focal area () such that the first heating light emerging from the focal area () impinges on the rim surface ().

Microlithographic apparatus

An illumination and displacement device for a projection exposure apparatus comprises an illumination optical unit for illuminating an illumination field. An object holder serves for mounting an object in such a way that at least one part of the object can be arranged in the illumination field. An object holder drive serves for displacing the object during illumination in an object displacement direction. A correction device serves for the spatially resolved influencing of an intensity of the illumination at least of sections of the illumination field, wherein there is a spatial resolution of the influencing of the intensity of the illumination of the illumination field at least along the object displacement direction. This results in an illumination and displacement device in which field-dependent imaging aberrations which are present during the projection exposure do not undesirably affect a projection result.

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Oberkochen, Germany

Martin Von Hodenberg