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Osram Gmbh

Helmholtz Zentrum Muenchen Deutsches Forschungszentrum Fuer Gesundheit Und Umwelt Gmbh

Infineon Technologies Ag

Osram Opto Semiconductors Gmbh

Evonik Degussa Gmbh

Technische Universitaet Muenchen

Technische Universitat Munchen

Helmholtz Zentrum Munchen Deutsches Forschungszentrum Fur Gesundheit Und Umwelt

Dritte Patentportfolio Beteiligungsgesellschaft Mbh &co. Kg

Thalhammer, Stefan

Rührmair, Ulrich

Martin Stutzmann

Martin Brandt

Roman Dimitrov

Robert Handschuh

Oliver Ambacher

Michael Kelly

Stefan Thalhammer

Markus Hofstetter

John Howgate

Andre Rainer Stegner

Martin Trocha

Hartmut Wiggers

Andreas Haertl

André Ebbers

Robert Lechner

Günther Vogg

Michael Scholz

Lugli Paolo

Biebl Erwin

Jirauschek Christian

Müller Kai

Dietmüller Roland

Csaba György

Rührmair Ulrich

Langhuth Hagen

A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers

The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.

Semiconductor biosensors

The invention relates to a radiation detector (), in particular for detecting x-ray radiation, comprising a carrier substrate (), a detector layer () which comprises GaN, is arranged on the carrier substrate () and has a thickness less than 50 &#x3bc;m, and contact electrodes () which form ohmic contacts with the detector layer (). The invention also relates to a measurement device which is equipped with at least one such radiation detector ().

Radiation detector and measurement device for detecting X-ray radiation

A method for detecting radiation during the examination of a sample () comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (), passing the radiation through the sample (), and detecting the radiation by means of at least one photoelectric solid-state detector () containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector () is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (DEG). A setting of the radiation is provided in such a way that the solid-state detector () is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section. An examination device () is also described, said examination device being configured for an examination of a sample () using radiation, more particularly X-ray radiation or proton radiation.

Method for detecting radiation and examination device for the radiation-based examination of a sample

The invention relates to an X-ray camera () for the high-resolution detection of X-rays (), comprising a plurality of radiation detectors (), each of which has a carrier substrate (), a detector layer (), and contact electrodes (). The detector layer () contains GaN, lies on the carrier substrate (), and has a thickness of less than 50 &#x3bc;m. The contact electrodes () form ohmic contacts with the detector layer (). The X-ray camera also comprises a retaining device () on which the radiation detectors () are arranged along a specified reference line or reference surface (). The invention also relates to a method for capturing an image of an object () being examined using X-rays (), said X-ray camera () being used in the method.

X-ray camera for the high-resolution detection of X-rays

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5&#xb7;10S&#xb7;cmto 10 S&#xb7;cm, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that

Porous semiconductive film and process for its production

A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

Electronic components produced by a method of separating two layers of material from one another

Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.

Semiconductor polymers, method for the production thereof and an optoelectronic component

A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

Method for transferring a semiconductor body from a growth substrate to a support material

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

Method of producing a light-emitting diode

Method of separating two layers of material from one another

Method of separating two layers of material from one another and electronic components produced using this process

Growing community of inventors

Erding, Germany

Martin Stutzmann