Osram Opto Semiconductors Gmbh

Martin Straβburg

Martin Mandl

Christopher Kölper

Patrick Rode

Alfred Lell

Werner Bergbauer

Jelena Ristic

Norwin Von Malm

Matthias Sabathil

Alexander F Pfeuffer

Lutz Höppel

Britta Göötz

Ion Stoll

Alexander Linkov

Daniel Bichler

Franz Zwaschka

Philipp Drechsel

Barbara Huckenbeck

Wolfgang Mönch

Andreas Waag

Uwe Strauβ

Tilman Schimpke

Steven Albert

Enrique Calleja-Pardo

Ana Maria Bengoechea Encabo

Miguel Angel Sanchez-Garcia

Johannes Ledig

Richard Neumann

An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

Light-emitting assembly having a carrier

An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.

Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure

An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.

Optoelectronic semiconductor chip

A light-emitting diode chip comprising:&#x2014;a semiconductor body () having a plurality of active regions (), wherein&#x2014;at least one of the active regions () has at least two subregions (),&#x2014;the active region () has at least one barrier region () arranged between two adjacent subregions () of said at least two subregions (),&#x2014;the at least two subregions () emit light of mutually different colour during operation of the light-emitting diode chip,&#x2014;in at least one of the subregions () the emission of light is generated electrically, and&#x2014;the barrier region () is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (), is specified.

Light-emitting diode chip

An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.

Optoelectronic semiconductor chip and method for producing same

An optoelectronic semiconductor chip includes a semiconductor layer stack consisting of a nitride compound semiconductor material on a carrier substrate, wherein the carrier substrate includes a surface containing silicon. The semiconductor layer stack includes a recess extending from a back of the semiconductor layer stack through an active layer to a layer of a first conductivity type. The layer of the first conductivity type connects electrically to a first electrical connection layer which covers at least a portion of the back through the recess. The layer of a second conductivity type connects electrically to a second electrical connection layer arranged at the back.

Optoelectric semiconductor chip

Growing community of inventors

Donaustauf, Germany

Martin Straβburg