Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Martin Strassburg

Patrick Rode

Matthias Sabathil

Karl Engl

Martin Mandl

Lutz Höppel

Lutz Hoeppel

Matthias Peter

Alfred Lell

Alexander F Pfeuffer

Uwe Strauss

Werner Bergbauer

Magnus Ahlstedt

Berthold Hahn

Frank Singer

Norwin Von Malm

Christoph Eichler

Ion Stoll

Hans-Jürgen Lugauer

Stefan Illek

Reiner Windisch

Johannes Baur

Alexander Linkov

Ulrich Zehnder

Rainer Butendeich

Vincent Grolier

Christopher Kölper

Dominik Scholz

Klaus Streubel

Andreas Biebersdorf

Britta Goeoetz

Adrian Stefan Avramescu

Simeon Katz

Philipp Drechsel

Tetsuya Taki

Barbara Huckenbeck

Peter Nagel

Andreas Leber

Christopher Koelper

Bastian Galler

Richard Floeter

Hans-Juergen Lugauer

Marcus Boehm

Thomas Bauer

Richard Flöter

A method for producing an optoelectronic semiconductor component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip comprising at least one light-emitting layer and at least one cavity and introducing at least one precursor of a conversion element in the at least one cavity, wherein the at least one conversion element comprises a perovskite-based ABXor ABB'Xstructure.

μLED chip architecture based on nanostructured perovskite converter materials

The invention relates to an optoelectronic element comprising a semiconductor chip () that emits a blue-green light () during operation and has at least one light passage surface () through which the blue-green light () emitted during operation passes and comprising a conversion element () which comprises fluorescent particles (), in particular fluorescent particles of only one type, and which is arranged on the light passage surface () at least in some areas. The fluorescent particles () at least partly convert the blue-green light () into a red light (), and the optoelectronic element emits a white mixed light () which contains non-converted components of the blue-green light () and components of the red light ().

Optoelectronic element and optoelectronic component

In at least one embodiment, the semiconductor layering sequence () is designed for generating light and comprises semiconductor columns (). The semiconductor columns () have a respective core () made of a semiconductor material of a first conductivity type, and a core shell () surrounding the core () made of a semiconductor material of a second conductivity type. There is an active zone () between the core () and the core shell () for generating a primary radiation by means of electroluminescence. A respective conversion shell () is placed onto the semiconductor columns (), which conversion shell at least partially interlockingly surrounds the corresponding core shell (), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells () which are applied to adjacent semiconductor columns (), only incompletely fill an intermediate space between the semiconductor columns ().

Semiconductor layering sequence for generating visible light and light emitting diode

A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Laser diode assembly

A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Radiation emitting or receiving optoelectronic semiconductor chip

A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands () having a semiconductor layer sequence () on a growth substrate (), wherein the islands () each comprise at least one active zone () of the semiconductor layer sequence (), and an average diameter of the islands (), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 &#x3bc;m inclusive, B) producing a separating layer () on a side of the islands () facing the growth substrate (), wherein the separating layer () surrounds the islands () all around, as viewed in a top view of the growth substrate (), C) attaching a carrier substrate () to a side of the islands () facing away from the growth substrate (), and D) detaching the growth substrate () from the islands (), wherein at least a part of the separating layer () is destroyed and/or at least temporarily softened during the detachment.

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

An optoelectronic device () having a semiconductor layer structure () comprising a first light-active layer () and a second light-active layer (). A first tunnel junction () is formed between the first light-active layer () and the second light-active layer (). A first Bragg reflector () is formed between the first light-active layer () and the first tunnel junction (). A second Bragg reflector () is formed between the second light-active layer () and the first tunnel junction ().

Optoelectronic component and method for the production thereof

A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.

Optoelectronic semiconductor chip and method for producing the latter

An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip

An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

Optoelectronic semiconductor chip

Laser diode assembly and method for producing a laser diode assembly

An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of InAlGaN, wherein 0&#x2266;x1&#x2266;1, 0&#x2266;y1&#x2266;1 and x1+y1&#x2266;1, and at least one quantum well layer composed of InAlGaN, wherein 0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1 and x2+y2&#x2266;1.

Optoelectronic component

Growing community of inventors

Donaustauf, Germany

Martin Strassburg