Ams Ag

Ams International Ag

Martin Sagmeister

Jens Hofrichter

Jochen Kraft

Gerald Meinhardt

Ewald Wachmann

Victor Sidorov

The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Chemical sensing device using fluorescent sensing material

The photodiode device comprises a substrate () of semiconductor material with a main surface (), a plurality of doped wells () of a first type of conductivity, which are spaced apart at the main surface (), and a guard ring () comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring () surrounds an area of the main surface () including the plurality of doped wells () without dividing this area. Conductor tracks () are electrically connected with the doped wells (), which are thus interconnected, and further conductor tracks () are electrically connected with a region of the second type of conductivity. A doped surface region () of the second type of conductivity is present at the main surface () and covers the entire area between the guard ring () and the doped wells ().

Radiation-hard high-speed photodiode device

Growing community of inventors

Graz, Austria

Martin Sagmeister