National Technology & Engineering Solutions of Sandia, LLC

Socpra Sciences Et Genie S.e.c.

Martin Rudolph

Malcolm Carroll

John King Gamble, Iv

Daniel Robert Ward

Gregory A Ten Eyck

Andrew David Baczewski

Noah Tobias Jacobson

Wayne Witzel

Andrew Mounce

Michel Pioro-Ladrière

John King Gamble

Malcom S Carroll

Patrick Harvey-Collard

Sophie Rochette

Ryan Michael Jock

A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charge reservoir and a quantum dot well. An electrical potential applied to the gates defines a tunnel barrier height, width and charge tunneling rate between the well and the reservoir without relying on any barrier gate to control the charge tunneling rate.

Electronic circuit for control or coupling of single charges or spins and methods therefor

Methods and apparatus of quantum information processing using quantum dots are provided. Electrons from a 2DEG are confined to the quantum dots and subjected to a magnetic field having a component directed parallel to the interface. Due to interfacial asymmetries, there is created an effective magnetic field that perturbs the energies of the spin states via an interfacial spin-orbit (SO) interaction. This SO interaction is utilized to controllably produce rotations of the electronic spin state, such as X-rotations of the electronic spin state in a double quantum dot (DQD) singlet-triplet (ST) qubit. The desired state rotations are controlled solely by the use of electrical pulses.

Spin-orbit qubit using quantum dots

Growing community of inventors

Albuquerque, NM, United States of America

Martin Rudolph