Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Ams-osram International Gmbh

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Martin Rudolf Behringer

Frank Singer

Alfred Lell

Hubert Halbritter

Alexander F Pfeuffer

Siegfried Herrmann

Tansen Varghese

Johann Luft

Bruno Jentzsch

Berthold Hahn

Christoph Klemp

Andreas Plößl

Korbinian Perzlmaier

Marc Philippens

Tobias Meyer

Andreas Biebersdorf

Petrus Sundgren

Peter Stauss

Jens Mueller

Thomas Schwarz

Roland Enzmann

Norwin Von Malm

Georg Bogner

Christoph Eichler

Uwe Strauss

Dominik Eisert

Roland Heinrich Enzmann

Erwin Lang

Sebastian Wittmann

Dimitri Dini

Kerstin Neveling

Ruth Boss

Alvaro Gomez-Iglesias

Bruno Acklin

Markus Broell

Karl Joachim Ebeling

Wolfgang Schmid

Christian Leirer

Johannes Baur

Stefan Groetsch

Dominik Scholz

Franz Eberhard

Andreas Plössl

Laura Kreiner

Lorenzo Zini

Ivar Tångring

Karl-Heinz Schlereth

Elmar Baur

Julia Stolz

Christian Mueller

Alexander Tonkikh

Stefan Morgott

Markus Bröll

Ann Russell

Werner Späth

Andreas Rudolph

Brendan Holland

Christian Hanke

Sönke Tautz

Josip Maric

Thomas Hoefer

Christoph Schwarzmaier

Peter Fuchs

Frank Moellmer

Zeljko Spika

Jana Sommerfeld

Sabine Vom Dorp

Christoph Rupprich

Thomas Knödl

Jörg Heerlein

Lutz Korte

Christian Lauer

Dean Maximilian Schoke

Tomasz Swietlik

Oliver Guenther

Stefanie Brüninghoff

Joerg Heerlein

Harald Feltges

Thomas KNÖDL

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Semiconductor laser and lidar system comprising the semiconductor laser

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance Rof the first resonator mirror is wavelength-dependent, so that Ror a product R of Rand the reflectance Rof the second resonator mirror in a wavelength range decreases from a target wavelength λof the laser to λ+Δλ from a value R, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.

Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

μ-LED, μ-LED device, display and method for the same

A radiation-emitting semiconductor device () is specified, comprising a semiconductor body () having an active region () provided for generating radiation, a carrier () on which the semiconductor body is arranged and an optical element (), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component

In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

Optoelectronic semiconductor chip and method for producing the same

An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

Optoelectronic semiconductor device having dielectric layers, and method for manufacturing the same

An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

Optoelectronic semiconductor component and method for producing the same

A method for producing a composite component () and a composite component () comprising a plurality of components (), a removable sacrificial layer (), an anchoring structure () and a common intermediate carrier () are specified. The components each have a semiconductor body () comprising an active zone (), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (A,B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components. Without the sacrificial layer, the components are mechanically connected to the intermediate carrier solely via the anchoring elements, wherein the anchoring elements are formed in such a way that under mechanical load they release the components so that the components are detachable from the intermediate carrier and are thus formed to be transferable.

Method for producing a plurality of transferable components and composite component of components

An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

Optoelectronic module, method for operating an optoelectronic module and head-mounted display

A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

Radiation-emitting semiconductor device and fabric

Growing community of inventors

Wuppertal, Germany

Martin Rudolf Behringer