Infineon Technologies Ag

Qimonda Ag

Martin Roessiger

Roman Knoefler

David Pritchard

Stefan Blawid

Manuela Gutsch

Ludovic Lattard

Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices

Input parameters and technically possible parameter values associated therewith are selected, from which are obtained support point values and result values assigned thereto for the geometrical properties. At each support point value, the respective result value is assigned to the parameter value assigned to the respective support point value. A response surface is adapted to the result values in a total range of the assigned parameter values. This results in response values for which a minimum value and a maximum value are determined in subranges. A total interval is formed from the largest response value overall and the smallest response value overall. The total interval is divided into a given number of sub-intervals. For each of the sub-intervals, the individual probabilities are cumulated, which yields a total probability value for a respective sub-interval over all the value intervals.

Method for determining statistical fluctuations of values of geometrical properties of structures required for the fabrication of semiconductor components

Growing community of inventors

Dresden, Germany

Martin Roessiger