Infineon Technologies Ag

Martin Richard Niessner

Walter Hartner

Thorsten Meyer

Saverio Trotta

Ashutosh Baheti

Christian Geissler

Maciej Wojnowski

Claus Waechter

Ismail Nasr

Ngoc-Hoa Huynh

Francesca Arcioni

Gerhard Haubner

Martin Gruber

Thomas Bemmerl

Thomas Kilger

Robert Fehler

Johannes Lodermeyer

Franz-Xaver Muehlbauer

Sebastian Pahlke

Birgit Hebler

A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.

Semiconductor apparatuses with radio-frequency line elements, and associated manufacturing methods

A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, an encapsulant encapsulating at least part of the electronic component and at least part of the carrier and having a bottom side at a first vertical level. At least one lead is electrically coupled with the electronic component and comprising a first lead portion being encapsulated in the encapsulant and a second lead portion extending out of the encapsulant at the bottom side of the encapsulant. A functional structure at the bottom side extends up to a second vertical level different from the first vertical level.

Package with elevated lead and structure extending vertically from encapsulant bottom

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

Semiconductor devices having a non-galvanic connection

An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.

Electronic device including redistribution layer pad having a void

A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.

Chip carrier laminate with high frequency dielectric and thermomechanical buffer

In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

RF system with an RFIC and antenna system

Growing community of inventors

Munich, Germany

Martin Richard Niessner