Robert Boschgmbh

Martin Rambach

Jochen Reinmuth

Thomas Jacke

Michael Grieb

Ning Qu

Daniel Monteiro Diniz Reis

Christian Tobias Banzhaf

A micromechanical component for a sound transducer device. The component includes a diaphragm element which includes a first diaphragm surface and a second diaphragm surface which points away from the first diaphragm surface, and at least one piezoelectric element situated on and/or at the first diaphragm surface. The micromechanical component includes a substrate having at least one control and/or evaluation circuit developed thereon and/or therein, the first diaphragm surface pointing toward the substrate, and the substrate is attached to the diaphragm element at least via at least one an electrically conductive bond connection structure which is developed on and/or at the first diaphragm surface, from which the second diaphragm surface is pointing away, and the at least one piezoelectric element is electrically connected to the at least one control and/or evaluation circuit at least via the at least one electrically conductive bond connection structure.

Micromechanical component for a sound transducer and corresponding production method

A micromechanical device that includes a MEMS substrate and a cap substrate that enclose at least one first cavity, with at least one contact pad that is situated outside the first cavity. A MEMS structure is situated in the first cavity and connected to the contact pad with the aid of a strip conductor, the strip conductor extending at least partially in the MEMS substrate. The contact pad is situated at a surface of the cap substrate.

Micromechanical device with contact pad

A micromechanical device that includes a substrate, a functional layer, and a cap that are situated one above the other in parallel to a main plane of extension. A cavity that is surrounded by a bond frame that extends in parallel to the main plane of extension is formed in the functional layer, the cap being connected to the bond frame. The cavity is situated partially between the bond frame and the substrate in a direction perpendicular to the main plane of extension. A method for manufacturing a micromechanical device is also provided.

Micromechanical device including a covering bond frame

A method is described for closing off a micromechanical device by laser melting, having the steps: (A) providing a micromechanical device having an access channel that has a collar at an external opening; (B) closing off the external opening of the access channel by laser irradiation of the collar, the collar being at least partly melted and the external opening being closed with melt made of a material of the collar. Also described is a micromechanical device having a laser melt closure, in particular produced by the method according to the present invention, the micromechanical device having an access channel that has a collar at an external opening, the external opening of the access channel being closed by a melt closure made of a material of the collar.

Method for closing off a micromechanical device by laser melting, and micromechanical device having a laser melt closure

A method for manufacturing a micromechanical inertial sensor, including: forming a movable MEMS structure in a MEMS wafer; connecting a cap wafer to the MEMS wafer; forming an access opening into the cavity, the access opening to the cavity being formed from two opposing sides; a defined narrow first access opening being formed from one side of the movable MEMS structure and a defined wide second access opening being formed from a surface of the MEMS wafer, the second access opening being formed to be wider in a defined manner than the first access opening; and closing the first access opening while enclosing a defined internal pressure in the cavity.

Method for manufacturing a micromechanical inertial sensor

A micromechanical device having a first cavity, which has a MEMS element, and having a second cavity. The second cavity is connected to the first cavity with a connection channel, the connection channel having a seal by which the first cavity and the second cavity are hermetically sealed from each other, the seal being able to be opened electrically.

Micromechanical device having a first cavity and a second cavity

A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.

Semiconductor transistor having superlattice structures

An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.

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Pliezhausen, Germany

Martin Rambach