Soitec

Universitè Catholique De Louvain

Martin Rack

Marcel Broekaart

Frédéric Allibert

Jean-Pierre Raskin

Eric Desbonnets

Eric Desbonnet

An integrated circuit device includes a semiconductor substrate having a resistivity of at least 100 &#x3a9;&#xb7;cm. An electrically insulating layer contacts the semiconductor substrate. The electrically insulating layer is susceptible of inducing in the semiconductor substrate a parasitic surface conduction layer that interfaces with the electrically insulating layer. An electrical circuit is located on the electrically insulating layer. The electrical circuit includes a section capable of inducing an electrical field in the semiconductor substrate. The integrated circuit device includes a depletion-inducing junction of which at least a portion is comprised in the semiconductor substrate. The depletion-inducing junction can autonomously induce in the semiconductor substrate a depleted zone that interfaces with a section of the electrically insulating layer that lies in-between two sections of the electrical circuit.

Integrated circuit device and method of manufacturing thereof

A method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit formed on a semiconductor substrate coated with an electrically insulating layer, wherein a curve representing the distortion as a function of a power of the input or output signal exhibits a trough around a given power (P), the method comprises applying, between the radiofrequency circuit and the semiconductor substrate, an electrical potential difference (V) chosen so as to move the trough toward a given operating power of the radiofrequency circuit.

Method for minimizing distortion of a signal in a radiofrequency circuit

Growing community of inventors

Louvain-la-Neuve, Belgium

Martin Rack