Espros Photonics Ag

Denso Corporation

Valeo Schalter Und Sensoren Gmbh

Martin Popp

Beat De Coi

Marco Annese

Thomas Schuler

Peter Horvath

Toshiaki Nagai

Lin Lin

Jan Simon

Felix Mueller

Heiko Hofmann

Cengiz Tugsav Kupcu

Felix Müller

The present disclosure relates to a time-of-flight distance measuring device. The light source () includes a plurality of emitting portions (), each of which illuminates a respective one of the sub-regions (R, R). The light receiver () includes a plurality of receiving portions () corresponding to respective ones of the emitting portions (). The first controller () controls (i) a first emitting portion () to emit the emitted light including an N-order harmonic component of a fundamental frequency and (ii) a second emitting portion () to emit the emitted light including an M-order harmonic component. The second controller () controls a particular receiving portion () corresponding to the first emitting portion () to be sensible to the N-order M-order harmonic components. The multipath detector () detects occurrence of the multipath error when the particular receiving portion () senses both the N-order and M-order components.

Time-of-flight distance measuring device and method for detecting multipath error

A method for reading a demodulation pixel of a distance sensor for determining a distance, in particular for determining the difference between two charge quantities independently of the total magnitude of the charge quantities, and also a distance sensor are proposed. For faster signal processing, provision is made for applying a variable control voltage to the transfer gates for influencing the potential wall, and lowering the respective potential walls of the corresponding transfer gates, before and/or until from the storage gates in each case charge carriers can surmount the respective potential wall of the corresponding transfer gate and pass to the assigned floating diffusion.

Method for reading a demodulation pixel and distance sensor

In order to measure distances precisely, a receiver device for determining a distance from an object is proposed, comprising: a receiver having a semiconductor structure with a photosensitive region for generating photo-induced charge carriers, which region faces the rear side, and having a transportation region, which faces the front side, wherein the photosensitive region and the transportation region are spatially separated from one another by a separation layer which has a passage between the photosensitive region and the transportation region, wherein the transportation region has an arrangement of at least two gates lying one next to the other, at least one of the gates thereof being located in the overlapping region of the passage.

Receiver device, sensor device and method for determining distances

TOF distance sensor for capturing the distance to an object by receiving radiation reflected by the object, said radiation emanating from a radiation source modulated by a modulation frequency, comprising a pixel matrix for recording a pixel image. The pixel matrix consists of demodulation pixels which are designed for rear-side reception of the radiation. The demodulation pixels comprise a conversion region for generating charge carriers from the received radiation, and a separating device for separating the charge carriers in accordance with the modulation frequency, and also a stop for partitioning-off the conversion region from the separating device in relation to the charge carriers, and also an aperture for passing the charge carriers from the conversion region into the separating device. The TOF distance sensor is embodied in such a way that in each case at least two demodulation pixels form a common aperture.

Time of flight (TOF) distance sensor

A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.

Semiconductor structure for photon detection

A sensor apparatus including at least one analog and one digital circuit component and an analog/digital converter for converting analog signals of the analog circuit component into digital signals for the digital circuit component, and vice versa, wherein the analog circuit component and the digital circuit components include at least one module for electronically implementing a function, and wherein one of the modules of the analog circuit component is embodied as a sensor device for detecting optical radiation and one of the modules of the digital circuit component is embodied as a signal processing device for processing digital signals. In order to enable improved integration into application-based sensor devices, the circuit components including the analog/digital converter are integrated as an integrated circuit in a chip and the chip is manufactured as a semiconductor structure using 1-poly technology.

Sensor apparatus, production method and detection apparatus

A method for producing semiconductor components on a substrate including photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer serving as a mask for the second layer is applied, and wherein at least two photolithographic patterning processes are carried out successively for the second layer, wherein, during one of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer, positive ramp angles &#x3b1; are produced at the patterning edges of the third layer, as a result of which the structures remaining free, given a thickness h of the third layer, decrease in size by a value D=2*h/tan &#x3b1;.

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Chur, Switzerland

Martin Popp