Bell Telephone Laboratories

Spectron Corporation of America, L.l.c.

Other

American Telephone & Telegraph Co., At&t Bell Laboratories

Lepton Inc.

At&t Bell Laboratories

Btl Fellows Company, LLC

Martin P Lepselter

William T Lynch

Simon M Sze

Conrad J Koeneke

Dan Maydan

Martin Barry Feldman

Hyman J Levinstein

Ashok K Sinha

Herbert A Waggener

Sheila Vaidya

Dawon Kahng

Joseph Raymond Ligenza

Ernest Edward La Bate

Sheldon M Kugelmass

Space charges of electrons which repel one another near masks in electron beam exposure machines are reduced by bleeding gas into the vicinity of the apertures in the mask and pumping the gas out from the direction electron travel.

High resolution electron beam exposure machines

A miniature high resolution plasma display suitable for integration on a semiconductor chip in combination with other circuitry is comprised of two crossed sets of conductors which are arranged on a first substrate to form an array of crosspoints. The two conductors at each crosspoint are a preselected distance apart and separated by a hollow cavity. An array of vertical tubes in a second substrate is spaced so as to correspond to the array of crosspoints. The second substrate is supported in alignment with the first so that the open end of the tubes oppose the cavity at each crosspoint. The tubes and cavities are filled with a pressurized gas and the assembly is sealed with a transparent, electrically conducting coverplate. When a voltage greater than or equal to the Paschen minimum firing voltage is applied across the cavity at a crosspoint, a plasma is created. Ions in the plasma spread from the cavity into the tube in response to a voltage that is applied to the cover plate. The charged particles in the plasma combine within the tube to generate light.

Pressurized plasma display

A flat-panel gas discharge display operable with either alternating or direct current includes magnetic elements within certain of the electrodes which define the discharge cell. The display may be free of implosive forces when operated at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. The second set of conductors includes a magnetic core or layer whereby the second set of conductors is magnetically attracted to an array of contact points on the substrate. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint. Air may be used as the operative gas. The display is formed on a single substrate. A system incorporating the flat-panel display is presented.

Flat-panel display having magnetic elements

A method for making a flat-panel gas discharge display is disclosed. The display is formed on a single substrate by providing a first set of conductors on the substrate, providing a second set of conductors on a supporting roll, orienting the second set of conductors at an angle relative to the first set, and affixing the second set of conductors to the substrate.

Method for making a gas discharge flat-panel display

Gas discharge flat-panel display and method for making the same

A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint. Air may be used as the operative gas. The display is formed on a single substrate, and may be stacked with additional displays in lieu of one or more capping layers. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge. A system incorporating the flat-panel display is presented. A suitably wired flat-panel structure may constitute a flat-panel plasma discharge lamp for lighting applications.

Gas discharge flat-panel display

Method of making a gas discharge flat-panel display

A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparant substrate and a second set of conductors crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a Paschen minimum firing voltage is applied to the pair of crossed conductors crossing at that crosspoint. Air may be used as the operative gas. The display may be formed on a single side of the substrate. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge. A system incorporating the flat-panel display is described.

An apparatus for exposing a radiation sensitive workpiece to define patterns therein includes an electron gun, a mask with spaced apertures for passing electron radiation, and a radiation deflector-blanker to direct the radiation to selected ones of the apertures and to form separate beamlets from the apertures then demagnify the separate beamlets and direct them onto the workpiece without crossing them. In one embodiment, the groups of apertures are fixed on the mask and define fixed undivided profiles in the path of the radiation.

Lithographic electron-beam exposure apparatus and methods

An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.

X-ray masks, their fabrication and use

An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing applications is thereby provided.

Charged-particle-beam lithography

A resistive load element comprises a Schottky barrier metal layer formed on the top surface of a doped p-type polycrystalline silicon (polysilicon) plug contacting a surface n.sup.+ zone located in a semiconductor body at a major horizontal surface thereof. The Schottky barrier metal layer is advantageously essentially a metal compound, such as titanium nitride, which does not react with the polysilicon and which forms a Schottky barrier contact with the polysilicon top surface of the plug. The polysilicon plug extends vertically down to the n.sup.+ zone through an aperture in an insulating layer that coats the major surface of the semiconductor body. The top surface of the Schottky barrier layer is coated with another metal layer, such as aluminum, for interconnection purposes. A pair of such elements can be integrated as loads, for example, in a static random access memory ('flip-flop') cell.

Semiconductor integrated circuit vertical geometry impedance element

Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).

Schottky-barrier MOS devices

Fabrication of schottky-barrier MOS FETs

In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate (13) and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers (19, 21, 18) on the source and drain regions (10.1, 10.2) as well as the silicon gate electrode (13).

Growing community of inventors

Summit, NJ, United States of America

Martin P Lepselter