Fyzikalni Ustav Av Cr, V.v.i.

Crytur, Spol. S.r.o.

Martin Nikl

Jindrich Houzvicka

Jan Polak

Karel Blazek

Petr Horodyský

Pavel Bohácek

Alice Hospodková

Eduard Hulicius

Jan Touŝ

Karel Bartos

Karel Bla{circumflex Over (z)}ek

Tomáš Marek

Jan Tous

Alice HospodkovÁ

Petr Horodysky

Currently, the known method of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components of the scintillation response, whereas the possibilities of significant shortening of the amplitude-dominant component of the scintillation response in this method are limited. The invention concerns the method of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5sor 6sions group. Having had the luminescence centres electrons excited as a result of absorbed electromagnetic radiation, the scintillator created in this method is capable of taking away a part of the energy from the excited luminescence centres via a non-radiative energy transfer, which results in a significant shortening of the time of duration of the amplitude-dominant component of the scintillation response.

Method of shortening scintillation response of luminescense centres and material of scintillator with shortened scintillation response

A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlInGaN type and a potential well layer of a AlInGaN type for radiant recombinations of electrons and holes, where xb&#x2264;xw and yb&#x2264;yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlInGaN.

Scintillation detector for detection of ionising radiation

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Prague, Czechia

Martin Nikl