Siemens Aktiengesellschaft

Infineon Technologies Ag

Martin Matschitsch

Thomas Laska

Herbert Mascher

Alfred Binder

Werner Stefaner

Thomas Kalin

Gernot Moik

Andreas Matzler

Gerhard Kroupa

Andreas M&auml;tzler

Norbert Michenthaler

Kurt Aigner

Gerhard Pucher

Ingomar Maunz

To markedly reduce wafer warping of semiconductor wafers without weakening the strength of adhesion to substrate materials, a novel back side metallizing system is presented. On a silicon semiconductor body an aluminum layer and a diffusion barrier layer that includes titanium are provided. A titanium nitride layer is incorporated into the titanium layer because it has been demonstrated that the titanium nitride layer can compensate for a large proportion of the wafer warping that occurs. Preferably, the usual tempering for improving the ohmic contact between the aluminum layer and the silicon semiconductor body is not performed after the complete metallizing of the semiconductor body, but rather after a first, thin aluminum layer has been deposited onto the silicon semiconductor body.

Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping

Semiconductor body with metallizing on the back side

Growing community of inventors

Feistritz I. Ros., Austria

Martin Matschitsch