Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Universidad Politécnica De Madrid

Martin Mandl

Alexander F Pfeuffer

Martin Strassburg

Patrick Rode

Martin Straβburg

Christopher Kölper

Ion Stoll

Norwin Von Malm

Britta Goeoetz

Simeon Katz

Barbara Huckenbeck

Tilman Schimpke

Alfred Lell

Matthias Sabathil

Dominik Scholz

Werner Bergbauer

Daniel Bichler

Rainer Butendeich

Philipp Drechsel

Franz Zwaschka

Thomas Lehnhardt

Robert Walter

Andreas Waag

Christopher Koelper

Bastian Galler

Andreas Rückerl

Rainer Hartmann

Christoph Schwarzmaier

Jelena Ristic

Martin Straßburg

Steven Albert

Ana Maria Bengoechea Encabo

Miguel Angel Sanchez-Garcia

Johannes Ledig

Richard Neumann

Roland Stieglmeier

Michael Schmal

Enrique Calleja-Pardo

A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Method for producing an optoelectronic component, and optoelectronic component

In at least one embodiment, the method is designed for producing a light-emitting diode display (). The method comprises the following steps: &#x2022;A) providing a growth substrate (); &#x2022;B) applying a buffer layer () directly or indirectly onto a substrate surface (); &#x2022;C) producing a plurality of separate growth points () on or at the buffer layer (); &#x2022;D) producing individual radiation-active islands (), originating from the growth points (), wherein the islands () each comprise an inorganic semiconductor layer sequence () with at least one active zone () and have a mean diameter, when viewed from above onto the substrate surface (), between 50 nm and 20 &#x3bc;m inclusive; and &#x2022;E) connecting the islands () to transistors () for electrically controlling the islands ().

Method for producing a light-emitting diode display and light-emitting diode display

The invention relates to a method for laterally structuring a structured layer () with a plurality of three-dimensional structure elements (), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer () on the structured layer in order to define at least one structured layer region () to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component ().

Method for lateral patterning of a pattern layer with three-dimensional pattern elements, and semiconductor device

An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements () arranged at a distance from one another on a surface () of a carrier element (), wherein each of the radiation generating elements has a diameter of less than 10 &#x3bc;m in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (), and wherein the optoelectronic semiconductor component is free of a growth substrate ().

Optoelectronics semiconductor device and method for producing an optoelectronic semiconductor device

The invention relates to an optoelectronic element comprising a semiconductor chip () that emits a blue-green light () during operation and has at least one light passage surface () through which the blue-green light () emitted during operation passes and comprising a conversion element () which comprises fluorescent particles (), in particular fluorescent particles of only one type, and which is arranged on the light passage surface () at least in some areas. The fluorescent particles () at least partly convert the blue-green light () into a red light (), and the optoelectronic element emits a white mixed light () which contains non-converted components of the blue-green light () and components of the red light ().

Optoelectronic element and optoelectronic component

An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.

Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

In at least one embodiment, the semiconductor layering sequence () is designed for generating light and comprises semiconductor columns (). The semiconductor columns () have a respective core () made of a semiconductor material of a first conductivity type, and a core shell () surrounding the core () made of a semiconductor material of a second conductivity type. There is an active zone () between the core () and the core shell () for generating a primary radiation by means of electroluminescence. A respective conversion shell () is placed onto the semiconductor columns (), which conversion shell at least partially interlockingly surrounds the corresponding core shell (), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells () which are applied to adjacent semiconductor columns (), only incompletely fill an intermediate space between the semiconductor columns ().

Semiconductor layering sequence for generating visible light and light emitting diode

An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

Method of producing a multicolor LED display

An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Radiation emitting or receiving optoelectronic semiconductor chip

In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands () having a semiconductor layer sequence () on a growth substrate (), wherein the islands () each comprise at least one active zone () of the semiconductor layer sequence (), and an average diameter of the islands (), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 &#x3bc;m inclusive, B) producing a separating layer () on a side of the islands () facing the growth substrate (), wherein the separating layer () surrounds the islands () all around, as viewed in a top view of the growth substrate (), C) attaching a carrier substrate () to a side of the islands () facing away from the growth substrate (), and D) detaching the growth substrate () from the islands (), wherein at least a part of the separating layer () is destroyed and/or at least temporarily softened during the detachment.

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.

Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure

A light-emitting diode chip comprising:&#x2014;a semiconductor body () having a plurality of active regions (), wherein&#x2014;at least one of the active regions () has at least two subregions (),&#x2014;the active region () has at least one barrier region () arranged between two adjacent subregions () of said at least two subregions (),&#x2014;the at least two subregions () emit light of mutually different colour during operation of the light-emitting diode chip,&#x2014;in at least one of the subregions () the emission of light is generated electrically, and&#x2014;the barrier region () is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (), is specified.

Light-emitting diode chip

Growing community of inventors

Lappersdorf, Germany

Martin Mandl