Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Martin Müller

Alfred Lell

Wolfgang Schmid

Marc Philippens

Tilman Schlenker

Michael Fehrer

Uwe Strauβ

Sönke Tautz

Hubert Halbritter

Peter Brick

Tony Albrecht

Harald König

Johann Luft

Alexander Behres

Christian Lauer

Günther Grönninger

Bernd Mayer

A surface-mountable semiconductor laser and an arrangement with such a semiconductor laser are disclosed. In one embodiment, the semiconductor laser is includes a semiconductor layer sequence having at least one generation region between a p-side and an n-side, at least two contact surfaces for external electrical contacting of the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser are contactable without bonding wires, at least one of a plurality of conductor rails extending from a side with the contact surfaces across the semiconductor layer sequence and a plurality of through-connections running at least through the generation region, wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm.

Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

Optoelectronic component and method for producing an optoelectronic component

A semiconductor laser device comprising an optically pumped surface emitting vertical emitter which emits in a vertical main radiation direction, and at least one monolithically integrated pump radiation source for optically pumping the vertical emitter, wherein the pump radiation source emits pump radiation in a pump main radiation direction extending transversely with respect to the vertical main radiation direction. In accordance with the invention, suitably dimensioned vertical sections are provided such that modes of the pump radiation are forced completely or at least partly in a vertical direction from this section to reduce absorption losses of the pump radiation at conductive layers.

Semiconductor laser device

A surface emitting semiconductor component with an emission direction that has a semiconductor body. The semiconductor body has a plurality of active regions for the generation of radiation and are spaced apart from one another, wherein between two active regions a tunnel junction is monolithically integrated in the semiconductor body. The two active regions are electrically conductively connected by means of the tunnel junction, and the semiconductor component is provided for operation with an external resonator. A laser device comprising a semiconductor component of this type and an external resonator is also disclosed.

Surface emitting semiconductor component, and laser device including such component

A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate () comprised of GaAs, has at least two laser stacks () which are arranged one above another and which each contain an active zone (). The active zone () is in each case arranged between waveguide layers (). The waveguide layers () each adjoin a cladding layer () at a side remote from the active zone. At least one of the waveguide layers () or cladding layers () of at least one laser stack (), comprises AlGaAs, where 0&#x2266;x&#x2266;1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer () or cladding layer () comprising the at least one additional element and the semiconductor substrate () composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

Monolithically integrated laser diode chip having a construction as a multiple beam laser diode

A surface emitting semiconductor component () with an emission direction which comprises a semiconductor body (). The semiconductor body comprises a plurality of active regions () which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element () being formed in the semiconductor body.

Surface emitting semiconductor component

A measuring arrangement comprises a radiation device (SE), having at least one first surface emitting semiconductor component () with a vertical emission direction, a detection device (DE) for detecting reflected radiation, and an evaluation circuit (AS), set up for controlling the radiation device (SE) and the detection device (DE) and for processing a detection result of the detection device (DE). The semiconductor component () comprises a semiconductor body () with a plurality of active regions () suitable for generating radiation and arranged at a distance from one another in a vertical direction. In this case, a tunnel junction () is monolithically integrated in the semiconductor body () between two active regions () and the two active regions () are electrically conductively connected by means of the tunnel junction during operation of the semiconductor component ().

Measuring arrangement and measuring system

An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (). Each laser diode () contains an active zone (), with the active zones () being in each case arranged between waveguide layers (), the waveguide layers () in each case adjoining a cladding layer () at a side remote from the active zone (). The cladding layers () comprise inner cladding layers (), which are arranged above a bottommost active zone () and below a topmost active zone (), and outer cladding layers () which are arranged below the bottommost active zone () or above the topmost active zone (). The inner cladding layers () have a smaller thickness than the outer cladding layers ().

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Regenstauf, Germany

Martin Müller