Applied Materials, Inc.

Martin Lee Riker

Fuhong Zhang

Keith A Miller

Zheng Wang

Xiangjin Xie

William Fruchterman

Xiaodong Wang

Lanlan Zhong

Kishor Kumar Kalathiparambil

Luke Vianney Varkey

Xianmin Tang

Kirankumar Neelasandra Savandaiah

Suhas Bangalore Umesh

Anthony Infante

Anantha K Subramani

Rongjun Wang

Adolph Miller Allen

Joung Joo Lee

Prashanth Kothnur

Srinivasa Rao Yedla

Shirish A Pethe

Shouyin Zhang

Wei W Wang

Ilya Lavitsky

Yu Liu

David Gunther

Alexander Jansen

Paul Kiely

Sunil Kumar Garg

Emily Schooley

Vijay D Parkhe

Muhammad M Rasheed

Steven Victor Sansoni

Shambhu Nath Roy

Goichi Yoshidome

Haitao Wang

Thanh X Nguyen

Rui Li

Wei Lei

Shreekant Gayaka

Paul Dennis Connors

Preetham P Rao

Uday Pai

Madan Kumar Shimoga Mylarappa

Winsor Lam

Carl R Johnson

Andrew Tomko

Noufal Kappachali

Chandrashekar Kenchappa

Lewis Yuan Tse Lo

Yida Lin

Sushil Arun Samant

Junjie Pan

Yao Wu

Ye Xu

Process chamber collimator

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

EM source for enhanced plasma control

Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Methods for shaping magnetic fields during semiconductor processing

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

Collimator for a physical vapor deposition chamber

Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.

Methods and apparatus for processing a substrate

Collimator for a physical vapor deposition (PVD) chamber

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

Apparatus for generating magnetic fields during semiconductor processing

Collimator for use in a physical vapor deposition (PVD) chamber

Growing community of inventors

Milpitas, CA, United States of America

Martin Lee Riker