Robert Boschgmbh

Martin Lapisa

Heribert Weber

Andreas Scheurle

Michael Knauss

Raschid Baraki

Isolde Simon

Heinz Nedelmann

Vitaliy Kondrashov

Bernd Klein

Melissa Delheusy

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Bonding pad layer system, gas sensor and method for manufacturing a gas sensor

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Metzingen, Germany

Martin Lapisa