Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Martin L Zucker

Ryan M Pakulski

Daniel J Devine

Hongqing Shan

David A Barker

Michael J Kuhlman

Leszek Niewmierzycki

Peter J Lembesis

Shawming Ma

Vladimir Nagorny

Jonathan David Mohn

Stephen E Savas

Rene George

Neil Mackie

Vincent Lee

Dixit V Desai

Tinghao Frank Wang

Steven C Selbrede

Young Jai Lee

Charles Crapuchettes

Steven E Parks

Jeffrey Cue

Yuya Matsuda

An end effector for moving workpieces and replaceable parts within a system for processing workpieces. The end effector may include an arm portion extending between a first arm end and a second arm end along the axial direction. The end effector may further include a spatula portion extending between a first spatula end and a second spatula end, the first spatula end being adjacent the second arm end. Further, the end effector may include a first support member extending outwardly from the spatula portion, a second support member extending outwardly from the spatula portion, and a shared support member extending outwardly from the arm portion. The shared support member and the first support member together to support workpieces of a first diameter, and the shared support member and the second support member together support replaceable parts of a second diameter.

End effectors for moving workpieces and replaceable parts within a system for processing workpieces under vacuum

A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.

Focus ring adjustment assembly of a system for processing workpieces under vacuum

A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.

Plasma processing apparatus having a focus ring adjustment assembly

Focus ring assemblies for plasma processing apparatus are provided. In one example implementation, an apparatus includes a plasma source configured to generate a plasma. The apparatus includes a chamber configured to receive a workpiece. The apparatus includes a workpiece support contained in the chamber and configured to support the workpiece. The apparatus includes a focus ring assembly. The focus ring assembly includes a focus ring having an upper tier and a lower tier. An inner edge of the upper tier can be separated a lateral distance of at least about 3 mm from an outer edge of the workpiece located on the workpiece support.

Material deposition prevention on a workpiece in a process chamber

Pedestal assemblies for processing apparatus, such as plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus can include a processing chamber having a processing chamber interior. The apparatus can include a plasma source configured to induce a plasma in the processing chamber interior. The apparatus can include a pedestal configured to support a substrate in the processing chamber interior during processing of the substrate. The apparatus can include a focus ring configured to be disposed around a periphery of the substrate when the substrate is supported on the pedestal. The focus ring can have a plurality of uniformly spaced apart slots. Each slot can be configured to engage with a corresponding protrusion located on the pedestal.

Pedestal assembly for plasma processing apparatus

Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal.

System and method for protection of vacuum seals in plasma processing systems

An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

Advanced multi-workpiece processing chamber

As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.

Low cost high throughput processing platform

An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating electrodes include an inner heating electrode defining an inner heating zone and a peripheral heating electrode defining a peripheral heating zone separated by a gap distance. The temperature profile across the surface of the substrate can be tuned by varying thermal characteristics of the pedestal thermal zone, the inner heating zone, the peripheral heating zone, or by varying the size of the gap distance between the inner heating electrode and the peripheral heating electrode.

Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate

A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

Workpiece support with fluid zones for temperature control

A wafer processing system and method in which a wafer, having a diameter, is movable between a loadlock and a processing chamber. A transfer chamber is arranged for selective pressure communication with the loadlock and the processing chamber. The transfer chamber having a configuration of lateral extents such that the wafer is movable through the transfer chamber between the loadlock and processing chamber along a wafer transfer path and the configuration of lateral extents causes the wafer, having the wafer diameter and moving along the wafer transfer path, to interfere with at least one of the loadlock and the processing chamber for any position along the wafer transfer path. The wafer includes a center and the wafer transfer path cab be defined by movement of the center through the transfer chamber. Swing arms are described that can independently move by different angles in opposing directions from a home position.

Advanced low cost high throughput processing platform

A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the processing chamber. In another embodiment, a coaxial inject/exhaust assembly enables activated species to be introduced into the processing chamber via an inner tube and gases to be exhausted from the processing chamber via an outer tube. Other embodiments incorporate an compound valve in the delivery system for selectively isolating the RPC chamber from the processing chamber and an optical baffle for protecting sensitive components of the isolation valve from exposure to ion bombardment and plasma radiation. The processing chamber may also include flow channels that enable activated species to clean cavities and components located underneath the susceptor, such as lift pin assemblies. Endpoint detection of the remote plasma clean may be performed by igniting a second low-power plasma in the processing chamber from activated species generated by the remote plasma generator, and monitoring emission lines (or ratios thereof) from the second plasma using an optical detector.

Growing community of inventors

Orinda, CA, United States of America

Martin L Zucker