Other

Bookham Technology Limited

Oclaro Technology Limited

Ii-Vi Laser Enterprise Gmbh

Martin Krejci

Norbert Lichtenstein

Julien Boucart

Stefan Weiss

René Todt

Ernst-Eberhard Latta

Tim Kellner

Andreas Wittmann

Martin Gotza

Michael Solar

Hans Jörg Troger

A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEon a submount having a second coefficient CTEand a cooler having a third coefficient CTE. The submount/cooler assembly shows an effective fourth coefficient CTEdiffering from CTE. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEis selected to be either lower than both CTEand CTEor is selected to be between CTEand CTE. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 &#x3bc;m thickness and a Mo layer of 100-400 &#x3bc;m thickness, or a single material with a varying CTE. Both result in a CTEvarying across the submount's thickness.

High power semiconductor laser diodes

The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiN:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiN:H whose density approaches the density of crystalline SiN.

Anti-reflection coatings for semiconductor lasers

Growing community of inventors

Zurich, Switzerland

Martin Krejci