Nanoplus Gmbh

Nanoplus Nanosystems and Technologies Gmbh

Martin Kamp

Adam Bauer

Sven Hoefling

Lukas Worschech

Martin Müller

An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film () having a first semiconductor material and an electron quantum film () having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film () having a third semiconductor material and separated by a first barrier layer (), and the electron injector region (I) has at least one injector quantum film () having a fourth semiconductor material and separated by a second barrier layer ().

Interband cascade laser amplifier medium

The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser () with a semiconductor substrate (), a laser layer () arranged on the semiconductor substrate, an array of waveguide ridges () arranged at a distance from the laser layer, and several strip-shaped lattice structures () arranged on the flat surface between the waveguide ridges. The lattice structure () is formed on an insulating or barrier layer () at a distance from the laser layer above the laser layer (). Processes for the production of such a semiconductor laser are also disclosed.

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Randersacker, Germany

Martin Kamp