Applied Materials, Inc.

Martin John Ripley

Norman L Tam

Balasubramanian Ramachandran

Yoshitaka Yokota

Agus Sofian Tjandra

Matthew S Rogers

Sean M Seutter

Tae Jung Kim

Methods and apparatus for selective gas injection and extraction for use in a substrate processing chamber are provided herein. In some embodiments, a gas injection and extraction apparatus includes a plate having a plurality of apertures through a thickness of the plate, each aperture of the plurality of apertures having an aperture wall; a plurality of tubes, each tube partially disposed within one of the plurality of apertures, wherein a disposed portion of each of the tubes is spaced apart from at least a portion of the aperture wall of the aperture in which it is disposed, thereby forming an interstice between at least a portion of the aperture wall and the disposed portion of the tube; a gas supply fluidly coupled to each of the tubes; and a vacuum source fluidly coupled to each of the interstices.

Apparatus for selective gas injection and extraction

Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90&#xb0; with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.

Side inject nozzle design for processing chamber

A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Method of improving oxide growth rate of selective oxidation processes

Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate disposed in a process chamber includes performing a process on a substrate disposed in a process chamber having a substrate support ring configured to support the substrate and a reflector plate disposed proximate a back side of the substrate; providing a first gas comprising one of an oxygen containing gas or a nitrogen containing gas to a back side of the substrate via one or more through holes disposed in the reflector plate while performing the process on the substrate; and maintaining the process chamber at a first pressure proximate a top surface of the substrate and at a second pressure proximate the bottom surface of the substrate, wherein the first pressure is greater than the second pressure sufficiently to prevent dislodgement of the substrate from the substrate support ring during processing.

Methods and apparatus for processing a substrate

Methods and apparatus for providing a process gas to a substrate in a processing system are disclosed herein. In some embodiments, the substrate processing system may include a process chamber having a substrate support disposed therein; a light source disposed above the process chamber to direct energy towards the substrate support; and a window assembly disposed between the light source and the substrate support to allow light energy provided by the light source to enter the process chamber towards the substrate support, wherein the window assembly includes an inlet to receive a process gas and one or more outlets to distribute the process gas into the process chamber.

Quartz window having gas feed and processing equipment incorporating same

An apparatus for photo-assisted or photo-induced processes is disclosed, comprising a process chamber having an integrated gas and radiation distribution plate. In one embodiment, the plate has one set of apertures for distributing one or more process gases, and another set of apertures for distributing radiation to a process region in the chamber.

Growing community of inventors

San Jose, CA, United States of America

Martin John Ripley