U.S. Philips Corporation

Koninklijke Philips Corporation N.v.

Martin John Powell

Michael Overdick

Anthony Roy Franklin

Walter Ruetten

Tiemen Poorter

John R Hughes

Carl Glasse

Falko Busse

Peter W Green

Toru Sakai

Ian D French

Augusto Nascetti

Walter Rütten

Lex Alving

Sipke Jacob Bijlsma

Barry F Martin

An Y-ray detector apparatus comprises an array of detector pixels arranged into a plurality of sub-arrays. The pixels in each sub-array share a common dose sensing output provided to a dose sensing output conductor which extends to a periphery of the pixel array. The dose sensing output conductor for one sub-array of pixels passes through the area occupied by another sub-array of pixels, which can lead to unwanted cross talk. The invention provides a plurality of additional screening electrodes, with a screening electrode substantially adjacent the dose sensing output conductor for each sub-array of pixels. These screening electrodes reduce cross talk between the dose sensing output and other pixel electrodes. In another arrangement, each pixel further comprises a pixel electrode for each pixel formed at an upper region of the array, and the dose sensing output conductors are formed at a lower region of the array. An intermediate conductor layer is then provided which overlaps the dose sensing output conductors for other sub-arrays of pixels and which pass through the area occupied by the sub-array of pixels.

X-ray image detector

A radiation detector comprises an electrode structure, a planarising layer being disposed over the electrode structure and a protective stack which covers the planarising layer. The planarising layer evens out substantial differences between levels of the electrode structure above the substrate on which the electrode structure is disposed. Consequently, cracks, weak spots and other defects in the protective stack are to a large extent avoided. Because the planarising layer covers essentially the entire electrode structure, practically all sources of defects, notably cracks, in the protective stack are avoided.

Radiation detector

The invention relates to an arrangement with light-sensitive or X-ray-sensitive sensors which are arranged in rows and columns of a matrix and generate charges in dependence on the amount of incident radiation, each sensor including a photosensor element with an intrinsic storage capacitor and/or a storage capacitor connected parallel to its terminals, and also a respective transistor; it also includes at least one switching line for each row of sensors via which the transistors can be activated so that the charges of the relevant activated sensors S can be read out simultaneously via read-out linesin order to ensure that, in conformity with the relevant mode of operation of the arrangement, the switching noise caused by the reading out of the sensors is reduced and/or a higher image repeat rate or more stable operating conditions for the photosensor element, also in the case of large signals, as well as an increase of the dynamic range of the photosensor element become possible in that each sensor S includes a further transistorwhich is connected directly to the photosensor elementand can be activated via at least one control line, both transistorsof each sensor S being connected in series and an electrode of a further capacitorbeing connected to the junction of the two transistors

Sensor matrix

An x-ray detector apparatus comprises an array of detector pixels ( ), each pixel ( ) comprising a conversion element ( ) for converting incident radiation into a charge flow, a charge storage element ( ) and a switching device ( ) enabling the charge stored to be provided to an output of the pixel ( ). A plurality of dose sensing pixels further comprise a dose sensing element ( ) during x-ray exposure results in a change in the charge stored on the charge storage element ( ) and also results in a dose sensing signal being generated which can be read out from the pixel ( ). The dose sensing pixels enable a dose signal to be obtained without reading the charges stored on the pixel charge storage elements, so that dose sensing can be carried out during exposure.

Exposure control in an x-ray image detector

A method of manufacturing a thin film transistor (TFT) is disclosed comprising source and drain electrodes joined by a semiconductor channel layer, a gate insulating layer formed from at least two sublayers and a gate electrode. The method comprising the steps of forming the gate insulating layer by depositing a thin film sublayer using a thin film technique; and depositing a printed sublayer by printing, wherein the thin film sublayer is located adjacent the semiconductor channel layer. The TFT may be a top gate TFT wherein the thin film sublayer is formed on the semiconductor channel layer, and wherein the printed sublayer is formed over the thin film sublayer. Alternatively, the TFT may be a bottom gate TFT wherein the printed sublayer is formed over the gate electrode; wherein the thin film sublayer is formed over the printed sublayer, and wherein the semiconductor channel layer is formed on the thin film sublayer.

Method of manufacturing a transistor

Thin-film transistors

A method of manufacturing an active matrix device ( ) comprising a row and column array of active elements wherein each element comprises a transparent pixel electrode ( ) associated with a self-aligned, top gate transistor ( R ) having a transparent gate electrode ( ). The method comprising the steps of forming opaque source ( ) and drain ( &prime;) electrodes on a transparent substrate ( ); forming a semiconductor channel layer ( ) so as to join source ( ) and drain ( &prime;) electrodes; forming a gate insulating ( ) layer; and depositing a transparent conductive layer and forming both the transparent gate electrode ( ) and the pixel electrode ( ) therefrom. The transparent gate electrode ( ) may be formed by depositing a layer of negative resist ( ) over the transparent conductive layer, exposing the layer of negative resist through the substrate such that regions of the negative resist shadowed by the opaque electrodes ( &prime;) remain unexposed, removing the unexposed negative and, having masked the region ( ) associated with the transparent pixel electrode ( ), removing the exposed transparent conductive layer.

Method of manufacturing an active matrix device

Thin-film transistors and method for producing the same

An X-ray examination apparatus comprises an X-ray source, an X-ray detector (,) and an X-ray filter arranged between the X-ray source and the X-ray detector. The X-ray filter comprises a plurality of filter elements each comprising a vessel containing an X-ray absorbing liquid, the liquid level in each vessel determining the X-ray absorptivity of the respective filter element. Control means is provided for applying electric voltages to the individual filter elements to change the liquid levels within an adjust time period. The control means is arranged to apply a respective control voltage to each individual filter element a repeat number of times within the adjust time period, the repeat number being selected so as substantially to maximize the rate of change of liquid level of the filter elements. This enables patient examination times to be reduced, by reducing the times between sequential images.

X-ray examination apparatus and method for adjusting the same

An ion implantation process comprises performing mass separation of ions from an ionised source of phosphorus so as to select the P,ions and reject phosphorus hydride ion species. The P,ions are injected into a semiconductor substrate. The rejection of phosphorus hydride ions species is facilitated because there are no such species adjacent (in terms of effective mass) the P,ion species. The use of the P,ion species also improves the implantation process for shallow implantation depths.

Ion implantation process

A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interlinked to define between them a substantially uniform spacing (24) corresponding to a channel region of the transistor. This arrangement enables the length to width ratio of the transistor to be reduced, giving rise to an increased current capacity of the transistor. By making one elongate portion (14) longer than the other (22), the transistor can have a source-gate capacitance lower than its drain-gate capacitance. These transistors may form switching elements in large area electronic devices, such as electroluminescent displays, plasma displays, electrostatic print heads, and X-ray dynamic beam attenuators.

Thin film transistors with elongated coiled electrodes, and large area

An image sensor comprises switching elements 30 on a substrate 1. An insulating separation layer 9 is disposed over the switching elements so that a photodiode arrangement 20a disposed over the insulating separation layer 9, can overlap the switching elements 30 and occupy a maximum area of the image sensor. A barrier layer 10 is interposed between the insulating separation layer 9 and the photodiode arrangement 20a, which prevents degradation of the photodiode characteristics over time.

Semiconductor image sensor with an insulating barrier layer

In the manufacture of a flat panel display or other large-area electronics device, a self-aligned thin-film transistor (TFT) is formed with source and drain silicide parts (31,32) adjacent an insulated gate structure (25,21,22) on a silicon film (20) which provides a transistor body (20a) comprising a channel area (20b) of the transistor. The transistor has its source and drain electrode pattern (11,12) extending under the silicon film (20). The insulated gate structure (25,21,22) is formed as a conductive gate (25) on an insulating film (21,22) which is patterned together with the conductive gate (25). A silicide-forming metal (30) is deposited over the insulated gate structure (25,21,22) and over exposed, adjacent areas (20c and 20d) of the silicon film, and the metal is reacted to form the silicide (31,32) with these adjacent areas of the silicon film. The unreacted metal is removed from the insulated gate structure (25,21,22) by means of a selective etchant to leave the source and drain silicide parts (31 and 32) self-aligned with the conductive gate (25). An electrical connection (n+; 31,32) is formed across the thickness of the silicon film (20) between the source and drain electrode pattern (11,12) and the respective source and drain silicide parts (31 and 32).

Method of fabricating a thin film transistor

An image detector (1, 1a) has an array (2) of sensors (3) formed from layers of material provided on a substrate (4) and separated from a biasing electrode (5) by a radiation conversion layer (6) in which charge carriers are generated in response to incident radiation. Each sensor has a collecting electrode (7a, 7b) for collecting charge carriers generated in the radiation conversion layer (6), a capacitor (c) for storing charge and a switching element (8) having at least first and second electrodes (9 and 10) with one (10) of the first and second electrodes being coupled to the collecting electrode (7a, 7b) for enabling charge carriers stored at the sensor (3) to be read out. Each collecting electrode (7a, 7b) extends laterally beyond the associated switching element (8) on an insulating layer (12a, 12b) provided over the switching elements to form the associated capacitor (c) with an underlying reference electrode (12a, 12b) separated from the collecting electrode (7a, 7b) by the insulating layer (11a, 11b).

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Horley, United Kingdom

Martin John Powell