Applied Materials, Inc.

Martin Jay Seamons

Kwangduk Douglas Lee

Sudha S Rathi

Bok Hoen Kim

Ganesh Balasubramanian

Chiu Chan

Deenesh Padhi

Jingmei Liang

Visweswaren Sivaramakrishnan

Hichem M'Saad

Karthik Janakiraman

Derek R Witty

Ziqing Duan

Praket Prakash Jha

Wendy H Yeh

Lei Jing

Juan Carlos Rocha-Alvarez

Prashant Kumar Kulshreshtha

Zheng John Ye

Sungwon Ha

Mandar Balasaheb Pandit

Saptarshi Basu

Sum-Yee Betty Tang

Hiroji Hanawa

Mehul B Naik

He Ren

Jianhua Zhou

Thomas E Nowak

Tsutomu Tanaka

Jay D Pinson, Ii

Naomi Yoshida

Ramprakash Sankarakrishnan

Mei-Yee Shek

Nikolaos Bekiaris

Matthew Spuller

Shi You

Tirunelveli S Ravi

Thuy Britcher

Irfan Jamil

Sudha S R Rathi

Nam Le

Bok Heon Kim

Ameeta Madhava

Nitin K Ingle

Shashank Sharma

Abhilash J Mayur

Amit Kumar Bansal

Wolfgang R Aderhold

Amir Hamed Al-Bayati

Suketu Arun Parikh

Benjamin Colombeau

Arulkumar P Shanmugasundram

Alexander T Schwarm

Mohamad A Ayoub

Sanjay S Natarajan

Zubin Huang

Diwakar N Kedlaya

Moshe Sarfaty

Rajesh Prasad

Yuxiang May Wang

Michael Wenyoung Tsiang

DongQing Li

Mario Dave Silvetti

Michael C Kwan

Ping Xu

Ian Scot Latchford

Sohyun Park

Eller Y Juco

Patrick Reilly

Kaushik Comandoor Alayavalli

Fang Ruan

Michael P Nault

Ilias Iliopoulos

Lloyd M Berken

Myungsun Kim

Hyoung-Chan Ha

Michael Anthony Stolfi

Yoichi Suzuki

Ndanka O Mukuti

Anton Baryshnikov

Yong Sun

Deven Raj Mittal

Kyuha Shim

Alexander Parkhomovsky

Jason K Foster

Tatsuya Sato

Rajaram Narayanan

Takashi Morii

Shuang Liu

Cary Ching

Joshua E Byrne

Qi Gao

Shuchi Sunil Ojha

Byung Kook Ahn

Davood Khalili

Shan Tang

Tom S Choi

Ngoc Le

Hyung-Joon Kim

Michael H Lin

A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.

Multi color stack for self aligned dual pattern formation for multi purpose device structures

Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.

Integrated flowable low-k gap-fill and plasma treatment

Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material.

Method of dielectric material fill and treatment

A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

Gas delivery systems and methods

A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200&#xb0; C. to 550&#xb0; C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200&#xb0; C. to 550&#xb0; C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

Techniques for improved low dielectric constant film processing

A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

Methods of post treating dielectric films with microwave radiation

A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Plasma processing using multiple radio frequency power feeds for improved uniformity

Embodiments described herein generally related to methods for forming a flowable low-k dielectric layer over a trench formed on a surface of a patterned substrate. The methods include delivering a silicon and carbon containing precursor into a substrate processing region of a substrate processing chamber for a first period of time and a second period of time, flowing an oxygen-containing precursor into a remote plasma region of a plasma source while igniting a remote plasma to form a radical-oxygen precursor, flowing the radical-oxygen precursor into the substrate processing region at a second flow rate after the first period of time has elapsed and during the second period of time, and exposing the silicon and carbon containing dielectric precursor to electromagnetic radiation for a third period of time after the second period of time has elapsed.

Oxidation reduction for SiOC film

Embodiments described herein provide a method of forming a silicon-and-oxygen-containing layer having covalent Si&#x2014;O&#x2014;Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and-oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.

Cure method for cross-linking Si-hydroxyl bonds

Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NFto remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Methods of dry stripping boron-carbon films

Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Gas flow profile modulated control of overlay in plasma CVD films

Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Edge hump reduction faceplate by plasma modulation

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San Jose, CA, United States of America

Martin Jay Seamons