Centre National De La Recherche Scientifique

Université Paris Est Creteil Val De Marne

Saft Groupe Sa

Martin Hytch

Patrick Bernard

Florent Houdellier

Etienne Snoeck

Florian Hue

Junxian Zhang

Bernard Knosp

Virginie Serin

A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (F); iii) superposing a beam (F) of radiation diffracted by the measurement area (B) with a beam (F) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.

Method, device and system for measuring nanoscale deformations

Growing community of inventors

Toulouse, France

Martin Hytch