Merck Patent Gesellschaft MIT Beschrankter Haftung

Merck Patent Gmbh

Merck Patent Gesellschaft MIT Beschraenkter Haftung

Martin Hostalek

Ludwig Pohl

Dietrich Erdmann

Matthias Lokai

Claus Dusemund

Werner B&uuml;ttner

Ching-Jung Kan

Chih-Peng Lu

Herbert Schumann

Holger Jurgensen

Meino Heyen

Uwe Hartmann

Rudolf Rhein

Klaus Freissler

Manuela Schweikert

Dietmar Oeter

Ernst Friedel

Ekkehart Seitz

Ewald Neumann

Rolf Hafner

The invention relates to a novel chromatographic process for the further purification of hydrogen peroxide solutions, giving high-purity solutions which can be employed in semiconductor technology under today's high purity requirements.

Method for the purification of hydrogen peroxide solutions

This invention relates to a novel method, which can be carried out according to industrial standards, for producing high-purity hydrochloric acid with a very low particle content, for use in the production of semiconductors.

Method for producing high-purity hydrochloric acid

The invention relates to a novel method for producing high-purity sulfuric acid for use in the semiconductor industry. The method comprises the addition of a hydrogen peroxide solution to an engineered oelum in order to reduce the SO concentration, evaporation of the SO and separation of acid traces. The high-purity SO is then enriched with inert gas and the SO is absorbed into sulfuric acid.

Method for producing high-purity sulphuric acid

The present invention relates to buffer systems in the form of solutions or salts for preparing suspensions which can be used for chemomechanical polishing. In particular, these buffer systems can be used for preparing suspensions having a high pH of 9.5-13 which are used for the chemomechanical polishing of Si and metal surfaces of semiconductors, known as wafers.

Buffer solutions for suspensions used in chemical-mechanical polishing

The invention relates to heterocyclic organometallic compounds formula I below and to the use thereof for the production of thin films and layers on substrates by gas phase deposition. ##STR1##

Heterocyclic organometallic compounds

Organometallic adduct compounds

Use of organometallic compounds to deposit thin films from the gas phase

Organometallic compounds

The invention relates to cyclic organometallic compounds which are intramolecularly stabilized and also to their use to produce thin films and epitaxial layers by gas-phase deposition.

Cyclic organometallic compounds

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Darmstadt, Germany

Martin Hostalek