Avago Technologies Wireless IP (singapore) Pte. Ltd.

Infineon Technologies Ag

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies International Sales Pte. Limited

Avago Technologies Wireless Ip, Pte. Ltd.

Contria San Limited Liability Company

Martin Handtmann

Lueder Elbrecht

Robert Aigner

Jyrki Kaitila

Hongya Xu

Robert Thalhammer

Winfried Nessler

Andriy Yatsenko

Martin Fritz

Martin Franosch

Stephan Marksteiner

Klaus-Guenter Oppermann

Bernhard Gebauer

Paul D Bradley

Hans-Joerg Timme

Dariusz Burak

Phil Nikkel

Alexandre Shirakawa

Li Sun

Ji-Fuh Liang

Valter Pasku

Oliver Wiedenmann

Sergej Scherer

Bulent Alicioglu

One way to stop electromagnetic fields from leaking outside of a module is an electric wall. Embodiments of the present disclosure are directed to emulating an electric wall with through vias. The through vias may be arranged around cavities in the printed circuit board. The density of the through vias may be selected based on an expected wavelength of the electromagnetic fields. The printed circuit board may then self-isolate components within the cavities from the electromagnetic fields.

Package with self shielding

A filter device provides a wideband passband of a communication device for a RF signal. The filter device includes a first filter circuit in parallel with a second filter circuit. The first filter circuit includes a first notch filter, and has a first notch. The second filter circuit includes a second notch filter in series with a reversal circuit for phase shifting the RF signal filtered by the second notch filter, the second filter circuit having a second notch. The first and second filter circuits form a band pass filter having a passband between a lower cutoff frequency defined by the second notch and an upper cutoff frequency defined by the first notch. The band pass filter provides low insertion loss in the passband, and high insertion loss in an adjacent lower stopband below the lower cutoff frequency and in an adjacent upper stopband above the upper cutoff frequency.

Band pass filter having parallel connected notch filter circuits

An apparatus, includes a substrate, an electronic component disposed over the substrate, and a frame element disposed over the substrate. The frame element provides structural rigidity to the apparatus. The apparatus also includes an encapsulating material disposed over an upper surface of the substrate, the electronic component and the frame element. An electrically conductive layer is disposed over the encapsulating material.

Frame elements for package structures comprising printed circuit boards (PCBs)

A multiplexer device includes an antenna node connected to an antenna for at least one of receiving and transmitting signals; multiple band pass filters connected to the antenna node, each band pass filter having a different passband; and multiple notch filters connected in to the antenna node and the multiple band pass filters, each notch filter having a different stopband corresponding to one of the passbands of the band pass filters. The notch filters are connected in parallel with one another in order to reduce insertion loss.

Multiplexer device with multiple notch filters connected in parallel

A very wide bandwidth composite band pass filter with steep roll-off of a corresponding passband includes a band pass filter and a high-Q acoustic resonator. The band pass filter has a corresponding passband with a very wide bandwidth and a passband roll-off. The high-Q acoustic filter has a corresponding stopband with a roll-off steeper than the passband roll-off, the high-Q acoustic filter being connected in parallel with the band pass filter such that a portion of the stopband is within the passband of the band pass filter, forming a combined passband. A frequency range of the combined passband is approximately the same as a frequency range of the passband of the band pass filter, and a combined roll-off of the combined passband is steeper on one side than the passband roll-off of the band pass filter.

Very wide bandwidth composite bandpass filter with steep roll-off

A multiplexer device includes at least one acoustic band pass filter connected to a common port, and a hybrid LC/acoustic filter connected to the common port in parallel with the at least one acoustic band pass filter. Each acoustic band pass filter has a corresponding passband and includes multiple acoustic resonators. The hybrid LC/acoustic filter includes at least one acoustic resonator, and has at least one capacitor replaced by a corresponding at least one acoustic resonator, respectively. Each of the at least one acoustic resonator included in the hybrid LC/acoustic filter provides a stopband response when operating in a corresponding acoustic frequency range, and acts as a capacitor when operating in a corresponding non-acoustic frequency range.

Multiplexer device with hybrid LC/acoustic filter

A multiplexer device includes at least one filtering device having at least one first band pass filter, connected to a common port via at least one series inductance, respectively, and only one or non-overlapping passbands, and at least one second filtering device, each of which includes at least one second band pass filter with a total of at least two second band pass filters are connected to the common port and having non-overlapping passbands, respectively. Combined series inductance transformed input impedance of the at least one first filtering device is inductive, when viewed from the common port, in the passbands of the at least two second band pass filters. Combined input impedance of the at least one second filtering device is substantially capacitive, when viewed from the common port, in a passband of the at least one first band pass filter in the at least one first filtering device.

Multiplexer device with first and second filtering devices connected to common port

A balun includes an unbalanced port having a single-ended terminal, a balanced port having first and second differential terminals, and first and second series resonant LC circuits. The first series resonant LC circuit is connected between the first and second differential terminals, and includes a first element of a first type and one element of a second type connected in series. The second series resonant LC circuit is connected between the single-ended terminal and ground, and includes second and third elements of the first type and the one element of the second type connected in series. The one element of the second type is shared by the first and second series resonant LC circuits. The first differential terminal is connected between the one element of the second type and the third element of the first type.

Four LC element balun

An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

Semiconductor device layer structure and method of fabrication

In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement

In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

Bulk acoustic resonator comprising non-piezoelectric layer

A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.

Coupled resonator filter with a filter section

A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.

Method for manufacturing a coupled resonator device

A duplexer includes first and second acoustic filters and a phase shifter. The first acoustic filter is connected between an antenna and the transmitter, and has a first passband. The second acoustic filter is connected between the antenna and the receiver, and has a second passband. The phase shifter includes at least one series capacitor connected in series with the antenna and at least one shunt inductor connected between the at least one capacitor and ground. The phase shifter is connected between the antenna and the first filter when the first passband is higher than the second passband, and provides a negative phase shift of an output impedance of the first filter. The phase shifter is connected between the antenna and the second filter when the second passband is higher than the first passband, and provides a negative phase shift of an input impedance of the second filter.

Duplexer with negative phase shifting circuit

An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.

Growing community of inventors

Munich, Germany

Martin Handtmann