Infineon Technologies Ag

Martin Goldammer

Charles Rimbert-Riviere

Hans Hartung

Ulrich Wilke

Lydia Lottspeich

Anita Herzer

Alexander Schmer

A power semiconductor module arrangement includes a housing that includes sidewalls, a lid, protrusions, a substrate, a plurality of components arranged on the substrate, and an encapsulant partly filling the interior of the housing, thereby covering the substrate, wherein each of the protrusions extends from the lid of the housing, a lower end of the protrusions is arranged directly on one of the components, or within a defined radius around one of the components, and wherein the lower end of a protrusion is the end facing away from the lid and towards the substrate, and the encapsulant has a generally flat surface and forms one or more elevations, wherein each of the elevations encloses an upper end of a different one of the components, and encloses the lower end of a respective one of the protrusions.

Power semiconductor module arrangements and methods for producing power semiconductor module arrangements

A method for forming a semiconductor substrate arrangement includes: forming a mask on a semiconductor substrate, the semiconductor substrate including and a metallization layer arranged on an insulation layer, the metallization layer arranged between the mask and insulation layer; forming a layer of electrically conductive coating on the metallization layer, the electrically conductive coating formed in at least one opening of the mask on regions of the metallization layer that are not covered by the mask; and after forming the electrically conductive coating, removing the mask. Forming the mask includes either applying an even layer of material on the metallization layer, or applying the material of the mask on the metallization layer such that the thickness of the mask in a region adjacent to edges of the mask is greater than the thickness of the regions of the mask further away from the edges.

Method for forming a semiconductor substrate arrangement

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Soest, Germany

Martin Goldammer