University of California

Martin Giles

Majeed Foad

Vidvuds Ozolins

Tomas Diaz De La Rubia

Babak Sadigh

Thomas J Lenosky

Silva Theiss

Andrew Quong

Maria-Jose Caturla

Mark Asta

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100&#xb0; C.; and for indium, a 1% tensile strain at 1100&#xb0; C., corresponds to an enhancement of the solubility by 200%.

Semiconductor material and method for enhancing solubility of a dopant therein

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100&deg; C.; and for indium, a 1% tensile strain at 1100&deg; C., corresponds to an enhancement of the solubility by 200%.

Method for enhancing the solubility of boron and indium in silicon

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Martin Giles