Seagate Technology Incorporated

Westinghouse Electric Corporation

Martin Gerard Forrester

Andreas Karl Roelofs

Tong Zhao

Joachim Walter Ahner

Florin Zavaliche

Markus Jan Peter Siegert

Stephen John Wrazien

Shan Hu

Xueshi Yang

Robert Earl Rottmayer

Mark David Bedillion

Mark Ian Lutwyche

Earl Chrzaszcz Johns

John J Talvacchio

Edward Stephen Skalko

Dierk Guenter Bolten

Andre Y L Liem

A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.

Reconfigurable electric circuitry and method of making same

The presently disclosed technology teaches an improved voltage pattern for conductive tips utilized as moveable top electrodes for writing data bits into ferroelectric media. A conductive tip is dragged in contact or near contact with a ferroelectric surface forming a moveable top electrode on a ferroelectric media disk. A metallic film is deposited onto a bottom-side of the ferroelectric media forming a conductive bottom electrode. Applying electrical voltage pulses between the conductive tip and the bottom electrode induces polarization switching of the ferroelectric media under the head. The improved voltage pattern incorporates positive and negative overshoot voltages to induce a polarization switch in the ferroelectric media and positive and negative drag voltages to expand a polarized region on the ferroelectric media. Potential benefits of the improved voltage pattern include reduced cross-track blooming and reduced along-track blooming resulting in a more uniform track width and bit series length.

Voltage pattern for ferroelectric recording head

A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.

Non-destructive read back for ferroelectric data storage device

An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed.

Non-destructive readback for ferroelectric material

An apparatus includes a first ferroelectric storage layer and a second ferroelectric storage layer adjacent the first ferroelectric storage layer. A coupling layer may be between the first ferroelectric storage layer and the second ferroelectric storage layer. The ferroelectric storage layers may be configured as a data storage medium for use in a data storage system. A related method is also disclosed.

Multiple ferroelectric films

A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.

Multilayer ferroelectric data storage system with regenerative read

An apparatus comprises mechanically scanned ferroelectric data storage media. A scanning electrode contacts the scannable surface with a contact force. The ferroelectric data storage media generates a piezoelectric potential that is picked up by the electrode. The piezoelectric potential has a polarity that varies as a function of data polarity on the data storage media.

Piezoelectric reading of ferroelectric data storage media

A method of writing to ferroelectric storage medium includes the steps of applying a first write voltage to a ferroelectric layer for writing a first bit in a first polarization direction and applying a second write voltage to the ferroelectric layer for writing a second bit in a second polarization direction opposing the first polarization direction. The first write voltage having a first magnitude, and the second write voltage having a second magnitude being greater than the first magnitude. The ferroelectric layer having a ferroelectric imprint polarization direction, and the first polarization direction being substantially the same as the ferroelectric imprint polarization direction. The ferroelectric medium contains first bits with a first surface area that is substantially equal to second bits surface area. A probe storage apparatus can use this method and ferroelectric medium.

Asymmetric write for ferroelectric storage

Ferroelectric media includes a media surface that is scannable by a contact. The contact provides a read signal. A polarization pattern is written in first regions of the media surface. The polarization pattern represents position data. The first regions are selectively exposed to an energy source. The exposing provides an imprint to the polarization pattern that prevents subsequent erasure by the read signal.

Probe-scanned ferroelectric media with imprinted regions

An apparatus comprises a ferroelectric storage medium, and a transducer for reading data from the ferroelectric storage medium and for writing data to the ferroelectric storage medium, wherein the transducer includes a substrate and a probe coupled to the substrate, wherein the probe includes a conductive element and a bilayer structure causing the probe to bend toward the ferroelectric storage medium.

Ferroelectric probe storage apparatus

A supported superconductor is made where a top layer of alkaline earth metal-copper oxide based material (10) is applied to a buffer layer (14) of La.sub.2-x Sr.sub.x CuO.sub.4, where x is a value from 0 to 0.4, all of which is supported by a bottom layer (12) of .alpha.-Al.sub.2 O.sub.3.

Growing community of inventors

Murrysville, PA, United States of America

Martin Gerard Forrester