Lucent Technologies Inc.

Agere Systems Guardian Corp.

Martin G Meder

Sailesh Mansinh Merchant

Yiu-Huen Wong

Michael Louis Steigerwald

An integrated circuit includes a substrate, and at least one copper interconnection layer adjacent the substrate. The interconnection layer further comprises copper lines, each comprising at least an upper surface portion including at least one copper fluoride compound. The copper fluoride compound preferably comprises at least one of cuprous fluoride and cupric fluoride. The compounds of copper and fluoride are relatively stable and provide a reliable and long term passivation for the underlying copper. In accordance with one particularly advantageous embodiment of the invention, the dielectric layer may comprise a fluorosilicate glass (FSG) layer. Accordingly, during formation of the FSG layer, the upper surface of the copper reacts with the fluorine to form the copper fluoride compound which then acts as the passivation layer for the underlying copper. In other embodiments, the dielectric layer may comprise an oxide or air, for example. In yet other embodiments, the copper line may include prefluorinated portions so as to avoid fluorine depletion of adjacent FSG layer portions.

Integrated circuit including passivated copper interconnection lines and associated manufacturing methods

A method for flash photolysis cleaning are used to remove photoresist contamination from semiconductor processing chambers. During semiconductor processing, such as etching and stripping, photoresist contamination deposits on the surfaces inside the processing chamber. As more and more semiconductor wafers are processed, the photoresist contamination accumulates and this buildup on the surfaces inside the chamber is the source of particulate contaminants which are damaging to the semiconductor devices processed in the chamber. By using ultraviolet radiation (UV), a reactive agent is generated from the incoming gas flow concurrently with the preferential heating of the photoresist contamination. By flowing oxygen into the semiconductor processing chamber and exposing the oxygen to UV, the highly reactive agent ozone is produced. The reactive agent reacts with the heated photoresist to produce volatile products that are removed from the chamber in the exiting gas flow. A detector is used downstream to determine when sufficient cleaning has occurred and the cleaning process is complete.

System and method for flash photolysis cleaning of a semiconductor processing chamber

A microwave circuit includes a waveguide, an e-bend, an h-bend, a magic tee, a connector, a coupler, a window, an adaptor, a horn, a switch, a transmitter, or an amplifier circuit. The microwave circuit has a metal surface. A fluid layer is deposited on the metal surface containing either a silicone or a silicone precursor. The fluid may be a volatile solvent containing about 0.5 percent silicone. The fluid may contain a mercapto functional copolymer, and may be dimethyl-co-methylmercaptopropyl siloxane. The fluid may be applied by brushing or dipping. Alternatively, the silicone or silicone precursor may be sprayed on by: bubbling nitrogen through a liquid containing the silicone or silicone precursor to saturate the nitrogen, and blowing the saturated nitrogen across the metal surface of the microwave circuit to deposit the silicone precursor thereon. The liquid may contain dimethyldimethoxysilane and dimethylmercaptopropyldimethoxysilane. After applying the fluid containing the silicone or a silicone precursor, an optional waiting step may be included, before transmitting microwave energy through the microwave circuit.

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Catasauqua, PA, United States of America

Martin G Meder