Infineon Technologies Ag

Robert Boschgmbh

Martin Freitag

Franz Jost

Dietmar Gogl

Stefan Lammers

Klaus Marx

Thomas Roehr

Wolfgang Raberg

Heinz Hoenigschmid

Thomas Klotzbuecher

Thomas B&ouml;hm

Axel Wenzler

Stefan Miethaner

Christian Neumann

Ralf Noltemeyer

Christoph Treutler

Henrik Siegle

Lutz Dorfmueller

Hartmut Kittel

David Heisenberg

Gunter Haas

Dietmar Senghaas

A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical '0' or '1'.

Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method

A device for measuring an angle and/or the torque acting on a rotatable body is proposed according to the invention, whereby the rotational angle is detected by means of magnetic or optical sensors. In particular, in a preferred exemplary embodiment, two devices () are proposed, each of which comprises two optically readable code tracks. The two code tracks (or) on one device (or) are similar in design and are offset in relation to each other, so that associated sensors () output a digital signal. The rotational angle is calculated based on the lag between the two digital signals. In a further embodiment it is provided that a torsion element () having a known torsional stiffness is situated between the two devices (). Torque transferred by the rotatable body () can also be calculated therefore from the angular difference of the two devicesThe device is used preferably in the steering axle of a motor vehicle.

Device for measuring the angle and/or the angular velocity of a rotatable body and/or the torque acting upon said body

An MRAM configuration has selection transistors and MTJ layer sequences lying in parallel with each other in a memory cell matrix. A considerable space saving can thus be achieved and therefore the MRAM configuration is less expensive to manufacture and has a greater packing density. In addition, the MRAM configuration allows a rapid read access with a minimal area requirement.

MRAM configuration

The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.

Magnetoresistive memory (MRAM)

Unwanted programming by stray magnetic fields is prevented in an MRAM configuration. Compensating currents that counteract the stray magnetic fields are strategically conducted through the MRAM configuration.

Method for preventing unwanted programming in an MRAM configuration

An MRAM module configuration in which, in order to increase the packing density, memory cell zones containing memory arrays and peripheral circuits are nested in one another. In this manner, an increased packing density of the memory cell is achieved which results in lowered production costs and a smaller chip space for a more compact configuration.

MRAM module configuration

An electronic element, in particular a chip element, with at least one first magnetoresistive element that is disposed on a substrate and fulfills a sensor function and with at least one second magnetoresistive element that is disposed on the substrate and fulfills a memory function.

Electronic component

A magnetoresistive sensor element, in particular an angle sensor element, has a first, magnetic layer ( ) whose direction of magnetization represents a reference direction, a second, nonmagnetic layer ( ) formed on the first layer ( ), a third magnetic layer ( ), formed on the second layer ( ), whose direction of magnetization can be varied by an external magnetic field, and an additional layer consisting of a current conductor ( ) for selective orientation of the direction of magnetization of the first layer ( ). A current flow direction of an electric current that passes through the current conductor ( ) can be switched to change the magnetization direction of the first magnetic layer ( ) to create different reference directions. An insulation layer ( ) for galvanic separation of the first magnetic layer ( ) from the additional layer ( ) is also provided between them.

Magnetoresistive sensor element with selective magnetization direction of the bias layer

A method for manufacturing a GMR bridge detector as well as the bridge detector itself in which magnetoresistive resistors are interconnected in the form of a bridge to detect a magnetic field. The resistors consist of a material that exhibits the giant magnetoresistive ratio (GMR) effect. The magnetoresistive sensitivity of the individual resistors is produced through annealing. The annealing of the resistors takes place through selective feeding of a current that is sufficient for reaching the temperature required for annealing into the bridge connections. Depending on the wiring of the bridge connections, the resistors are provided with the property necessary for the GMR effect either singly or in pairs. As the material for the resistors, in particular, a material of the class of discontinuous multilayer materials, particularly NiFe/Ag, is used in which the GMR property is produced through single annealing at a specific temperature.

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Munich, Germany

Martin Freitag