Micron Technology Incorporated

X Development LLC

Glo Ab

Rensselaer Polytechnic Institute

Wing Aviation LLC

Samsung Electronics Co., Ltd.

Google Inc.

Samsung Electro-mechanics Co., Ltd.

Sandia Corporation

Samsung Led Co., Ltd.

Qromis, Inc.

Quora Technology, Inc.

Martin F Schubert

Vladimir Odnoblyudov

Michael Jason Grundmann

Brian John Adolf

Jesse Lu

Philip Edwin Watson

Cem Basceri

Scott E Sills

Durai Vishak Nirmal Ramaswamy

Lifang Xu

Daniel Bryce Thompson

Johan Ulrich Lewin Jessen

E Fred Schubert

Jong Kyu Kim

Yongjun Jeff Hu

Raj B Apte

Allen McTeer

Thomas Gehrke

Nathan Fredrick Gardner

Benoit M Schillings

Shu Qin

Scott D Schellhammer

Gabriella Levine

Kevin Tetz

Edward Allen Keyes

Sylvia Joan Smullin

Alfred Ka Chun Cheung

Ian Alexander Durant Williamson

Sameer Chhajed

Cheolsoo Sone

Scott Brad Herner

Linda T Romano

Mitchell Joseph Heinrich

Casey R Kurth

Clifford L Biffle

Min-Ho Kim

William Raymond Regan

Michael Patrick Bauerly

Jaehee Cho

Kristina Liv Larsen

Rowan M Ogden

Sukho Yoon

Ahmed Noemaun

Mark B Spitzer

Eric H C Liu

Jason Donald Thompson

Ming Zhang

Cheol-soo Sone

Frank Wilhelm Mont

Fariba Danesh

Ronald T Kaneshiro

Jae-hee Cho

Jeremy S Frei

Mary H Crawford

Anil Tipirneni

Yongjo Park

Daniel D Koleske

Jong-kyu Kim

Shawn-Yu Lin

Mei-Ling Kuo

David J Poxson

Phillip Edwin Watson

F Fred Schubert

Yongio Park

Di Zhu

David Alexander

Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods

Vertical solid-state transducers ('SSTs') having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Vertical solid-state transducers having backside terminals and associated systems and methods

Solid state lighting ('SSL') devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device can further include a first contact on the first semiconductor material and a second contact on the second semiconductor material and opposite the first contact. The second contact can include one or more interconnected fingers. Additionally, the SSL device can include an insulative feature extending from the first contact at least partially into the first semiconductor material. The insulative feature can be substantially aligned with the second contact.

Solid state lighting devices with improved current spreading and light extraction and associated methods

Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for designing a multimodal photonic component. In one aspect, a method includes defining a loss function within a simulation space including multiple voxels and encompassing features of the multimodal photonic component. The loss function corresponds to a target output mode profile for an input mode profile, where the target output mode profile includes a relationship between a set of operating conditions and one or more supported modes of the multimodal photonic component at a particular operative wavelength. The initial structure is defined for one or more features, where at least some of the voxels corresponding to features have a dimension smaller than a smallest operative wavelength of the multimodal photonic component, and values for structural parameters for the features are determined so that a loss according to the loss function is within a threshold loss.

Multimodal photonic components

Solid-state transducers ('SSTs') and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods

Solid state lighting ('SSL') devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

Solid state lighting devices with improved contacts and associated methods of manufacturing

Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.

Solid state transducer dies having reflective features over contacts and associated systems and methods

In some embodiments, techniques for creating a design for a physical device are provided. A computing system receives an initial design of the physical device. Performance of the physical device is simulated using the initial design. A performance loss value is determined for the physical device based on the simulated performance at a target wavelength and one or more delta wavelengths. The performance loss value is backpropagated to determine a gradient corresponding to an influence of changes in the initial design on the total performance loss value. The initial design of the physical device is revised based at least in part on the gradient.

Using shift-tolerant loss functions in an inverse design process

Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system may include a support substrate that carries a solid state emitter and a state device. The solid state emitter and the state device may be stacked along a common axis. Further, the state device may be positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The solid state emitter may include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The state device may include a state-sensing component having a composition different than that of the active region and the first and second semiconductor components. In some embodiments, the state-sensing component may include an electrostatic discharge protection device, a thermal sensor, a photosensor, or a combination thereof.

Solid state transducers with state detection, and associated systems and methods

Solid-state transducer ('SST') dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies.

High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods

Various embodiments of SST dies and solid state lighting ('SSL') devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

Ultrathin solid state dies and methods of manufacturing the same

In some embodiments, a method for creating a design for a physical device is provided. A computing system receives a design specification. The computing system generates a proposed design based on the design specification. The computing system determines a vector of loss values based on the proposed design. The computing system determines a scalar loss value based on a distance between the vector of loss values and a volume representing desired characteristics of the physical device. The computing system updates the proposed design based on the scalar loss value.

Scalar loss functions for multiobjective optimization

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

High-voltage solid-state transducers and associated systems and methods

In some embodiments, a computer-implemented method for creating a fabricable segmented design for a physical device is provided. A computing system receives a design specification. The computing system generates a proposed segmented design based on the design specification. The computing system determines two or more loss values based on the proposed segmented design. The computing system combines the two or more loss values to create a combined loss value. The computing system creates an updated design specification using the combined loss value. The generating, determining, combining, and creating actions are repeated until a fabricable segmented design is generated.

Techniques for fusing multiple loss functions in an inverse design process

Growing community of inventors

Boise, ID, United States of America

Martin F Schubert