Vitesco Technologies Germany Gmbh

Martin Ehrmann

Peter Krasselt

Markus Hövermann

Martin Metzler

Michael Haber

A power half-bridge module may include: a busbar carrier with insulation embedding a first busbar with two longitudinal sections; a semiconductor carrier with a second busbar and a third busbar in a row in the longitudinal direction of the busbar carrier; a first semiconductor switch with a lower-side load-current contact area on the second busbar; and a second semiconductor switch with a lower-side load-current contact area on the third busbar. The first busbar has a contact area on the first section and a second contact area on the second section. The busbar carrier has a recess at the height of the second section and extending from one surface to another. The semiconductor carrier is arranged on the second surface of the busbar carrier so both switches protrude into the recess. The second switch has an upper-side load-current contact area electrically connected to the second contact area of the first busbar.

Power half-bridge module, power inverter, and method for producing a power half-bridge module

Various embodiments include a method for operating a bidirectional voltage converter with an input-side half-bridge, an output-side half-bridge, and a bridge branch having a bridge inductance, comprising: determining an actual mean bridge current value flowing through the bridge branch during a respective subsequent switching cycle T1 of the transistor switches in a respective current switching cycle T0; determining switch-on time points and switch-on durations of the respective transistor switches for the respective subsequent switching cycle T1; and switching on the respective transistor switches at the respective ascertained switch-on time points and for the respective ascertained switch-on durations in the respective subsequent switching cycle T1.

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Munich, Germany

Martin Ehrmann