Asml Netherlands B.v.

Therma-wave, Inc.

Tokyo Electron Limited

Nanometrics Inc.

North Carolina State University

Martin Ebert

Arie Jeffrey Den Boef

Martin Jacobus Johan Jak

Li Chen

Maurits Van Der Schaar

Gerbrand Van Der Zouw

Richard A Yarussi

Thomas Traber

Ilya Chizhov

Marcus Adrianus Van De Kerkhof

Hugo Augustinus Joseph Cramer

Kaustuve Bhattacharyya

Nitesh Pandey

Patrick Warnaar

Youping Zhang

Henricus Petrus Maria Pellemans

David E Aspnes

Jen-Shiang Wang

Lanhua Wei

Peter Hanzen Wardenier

Daan Maurits Slotboom

Leonardus Henricus Marie Verstappen

Guangqing Chen

Panagiotis Pieter Bintevinos

Stephen Peter Morgan

Lotte Marloes Willems

Pieter Jacob Mathias Hendrik Knelissen

Feng Xiao

Dale Linseth

A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Method and apparatus for inspection and metrology

A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

Method and apparatus for illumination adjustment

A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters.

Metrology method and apparatus

A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

Metrology method, target and substrate

In an illumination system () for a scatterometer, first and second spatial light modulators lie in a common plane and are formed by different portions of a single liquid crystal cell (). Pre-polarizers () apply polarization to first and second radiation prior to the spatial light modulators. A first spatial light modulator (-S) varies a polarization state of the first radiation in accordance with a first programmable pattern. Second spatial light modulator (-P) varies a polarization state of the second radiation accordance with a second programmable pattern. A polarizing beam splitter () selectively transmits each of the spatially modulated first and second radiation to a common output path, depending on the polarization state of the radiation. In an embodiment, functions of pre-polarizers are performed by the polarizing beam splitter.

Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method

A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.

A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate.

Method of assessing a model of a substrate, an inspection apparatus and a lithographic apparatus

An optical metrology system collects spectral data while scanning over the focal range. The spectral data is evaluated to determine a plurality of peak intensity values for wavelengths in the spectra. The peak intensities are then combined to form the measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined based on the measured maximum intensity and a number n of intensity values around the measured maximum intensity, e.g., using curve fitting. If desired, the number n may be varied as a function of wavelength to vary the effective spot size of the metrology system while optimizing noise performance. The peak intensity may also be derived as the measured maximum intensity or through a statistical analysis.

Scanning focal length metrology

A normalization procedure for an ellipsometric system having a rotating optical element such as a polarizer or compensator is disclosed. In operation, a first DC component is extracted from the measured output signals obtained during the first 180 degrees of rotation of the optical element and a second DC component is extracted from the output signals obtained during the second 180 degrees of rotation of the optical element. The first DC component is used to normalize the output signals obtained during the first 180 degrees of rotation of the optical element and the second DC component is used to normalize the output signals obtained during the second 180 degrees of rotation of the optical element.

Method for noise improvement in ellipsometers

An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and, consequently, a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

Multiple beam ellipsometer

A fast wafer positioning method for optical metrology includes three main steps. In the first step, an initial measurement recipe is constructed for the host system and target wafer. In the next step, the host system performs a test run using the initial measurement and the target wafer. In this step, the initial measurement recipe is refined to eliminate positioning errors produced by the host system. In the final step, the refined measurement recipe is used by the host system to process production wafers (e.g., as part of a production environment). This is performed using the information included in the refined measurement recipe without reference to optical images of the wafers being processed.

Fast wafer positioning method for optical metrology

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Fremont, CA, United States of America

Martin Ebert